Periodic Behavior of the Exciton Oscillator Strength with AlAs Thickness in Type II GaAs AlAs Heterostructures

• Authors: C. Gourdon , D. Martins , P. Lavallard , E. Ivchenko
• Languages of publication: EN

Abstracts

EN

For a single GaAs/AlAs/GaAs type II pseudodirect double quantum well, as well as for superlattices it was predicted that the oscillator strength of the lowest optical transition has a periodic dependence on the number of AlAs monolayers. The oscillator strength depends on the coupling between theΓ and X electron states. We use samples containing a single GaAs/AlAs/GaAs double quantum well with thickness gradient to show experimental evidence of this effect. The results concerning theΓ-X coupling are obtained from the study of the ratio of photoluminescence intensities of the zero-phonon line and the phonon replica and from their time decay. They show the monolayer dependence of the Γ-X mixing potential. We extend the model describing the Γ-X coupling for ideal interfaces in the frame of the envelope approximation to the case of non-abrupt interfaces and exciton localization. The amplitude of variation of the radiative recombination time due to the Γ-X mixing is well reproduced within this model.

Keywords

EN

78.66.-w; 71.70.-d

Discipline

• 71.70.-d: Level splitting and interactions(see also 73.20.-r Surface and interface electron states; 75.30.Et Exchange and superexchange interactions)
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 3
• Pages: 409-416

Dates

published

2001-09

received

2001-06-01

Contributors

author

C. Gourdon

• Groupe de Physique des Solides, Universités Paris 6 et Paris 7, CNRS UMR 75-88, Tour 23, 2 Place Jussieu, 75251 Paris cedex 05, France

author

D. Martins

• Groupe de Physique des Solides, Universités Paris 6 et Paris 7, CNRS UMR 75-88, Tour 23, 2 Place Jussieu, 75251 Paris cedex 05, France

author

P. Lavallard

• Groupe de Physique des Solides, Universités Paris 6 et Paris 7, CNRS UMR 75-88, Tour 23, 2 Place Jussieu, 75251 Paris cedex 05, France

author

E. Ivchenko

• Ioffe Physico-technical Institute, Russian Academy of Sciences, 194021 St Petersburg, Russia

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Identifiers

DOI

10.12693/APhysPolA.100.409