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2001 | 100 | 3 | 409-416
Article title

Periodic Behavior of the Exciton Oscillator Strength with AlAs Thickness in Type II GaAs AlAs Heterostructures

Content
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Languages of publication
EN
Abstracts
EN
For a single GaAs/AlAs/GaAs type II pseudodirect double quantum well, as well as for superlattices it was predicted that the oscillator strength of the lowest optical transition has a periodic dependence on the number of AlAs monolayers. The oscillator strength depends on the coupling between theΓ and X electron states. We use samples containing a single GaAs/AlAs/GaAs double quantum well with thickness gradient to show experimental evidence of this effect. The results concerning theΓ-X coupling are obtained from the study of the ratio of photoluminescence intensities of the zero-phonon line and the phonon replica and from their time decay. They show the monolayer dependence of the Γ-X mixing potential. We extend the model describing the Γ-X coupling for ideal interfaces in the frame of the envelope approximation to the case of non-abrupt interfaces and exciton localization. The amplitude of variation of the radiative recombination time due to the Γ-X mixing is well reproduced within this model.
Keywords
EN
Year
Volume
100
Issue
3
Pages
409-416
Physical description
Dates
published
2001-09
received
2001-06-01
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n313kz
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