EN
Thermoelectric power was studied in the temperature range 100≤ T≤300 K in 0.3-1μm thick ferromagnetic Ga_{1-x}Mn_xAs epitaxial layers (0.015≤ x≤0.06) in order to determine Fermi energy E_F and carrier concentration p. For 0.015≤ x≤0.05, at T=273 K we find E_F=275±50 meV and p=(2.5± 0.5)×10^{20} cm^{-3} (approximately Mn content independent). For x= 0.06, the Fermi energy decreases by about 100 meV with the corresponding reduction of hole concentration to p=1.2×10^{20} cm^{-3}. At T=120 K, these parameters vary between E_F=380 meV and p=3.5×10^{20} cm^{-3} for x=0.015 to E_F=110 meV and p=5×10^{19} cm^{-3} for x=0.06.