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2001 | 100 | 3 | 327-334
Article title

Fermi Level Position in GaMnAs - a Thermoelectric Study

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Abstracts
EN
Thermoelectric power was studied in the temperature range 100≤ T≤300 K in 0.3-1μm thick ferromagnetic Ga_{1-x}Mn_xAs epitaxial layers (0.015≤ x≤0.06) in order to determine Fermi energy E_F and carrier concentration p. For 0.015≤ x≤0.05, at T=273 K we find E_F=275±50 meV and p=(2.5± 0.5)×10^{20} cm^{-3} (approximately Mn content independent). For x= 0.06, the Fermi energy decreases by about 100 meV with the corresponding reduction of hole concentration to p=1.2×10^{20} cm^{-3}. At T=120 K, these parameters vary between E_F=380 meV and p=3.5×10^{20} cm^{-3} for x=0.015 to E_F=110 meV and p=5×10^{19} cm^{-3} for x=0.06.
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • MAX-lab, Lund University, 22100 Lund, Sweden
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n309kz
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