Self-Compensating Incorporation of Mn in Ga_{1-x}Mn_xAs

• Authors: J. Mašek , F. Máca
• Languages of publication: EN

Abstracts

EN

We consider hypothetical Ga_7MnAs_8, Ga_{16}MnAs_{16}, and Ga_{14}Mn_3As_{16} crystals with Mn in a substitutional, interstitial, and both positions. Spin-polarized full-potential linearized augmented plane wave calculations were used to obtain their electronic structure. We show that the interstitial Mn acts as a double donor and compensates the holes created by two Mn atoms in substitutional positions. This explains why the number of holes in Ga_{1-x}Mn_xAs is much smaller than x. The presence of interstitial atoms may also be the reason for the lattice expansion with increasing content of Mn. The differences in electronic behavior of substitutional and interstitial Mn are discussed.

Keywords

EN

71.15.Ap; 71.20.Nr; 71.55.Eq; 75.50.Pp

Discipline

• 71.15.Ap: Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
• 71.55.Eq: III-V semiconductors
• 75.50.Pp: Magnetic semiconductors
• 71.20.Nr: Semiconductor compounds

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 3
• Pages: 319-325

Dates

published

2001-09

received

2001-06-01

Contributors

author

J. Mašek

• Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Praha 8, Czech Republic

author

F. Máca

• Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Praha 8, Czech Republic

References

• 1. H. Ohno, Science, 281, 951, 1998
• 2. T. Dietl, H. Ohno, F. Matsukara, J. Cibert, D. Ferrand, Science, 287, 1019, 2000
• 3. H. Akai, Phys. Rev. Lett., 81, 3002, 1998
• 4. V.A. Gubanov, C.Y. Fong, C. Boekema, Phys. Status Solidi B, 218, 599, 2000
• 5. M. Shirai, T. Ogawa, I. Kitagawa, N. Susuki, J. Magn. Magn. Mater., 117-181, 1383, 1998
• 6. A. Petrou, M.C. Smith, C.H. Perry, J.M. Worlock, J. Warnock, R.L. Aggrawal, Solid State Commun., 55, 865, 1985
• 7. A. Twardowski, Acta Phys. Pol. A, 98, 203, 2000
• 8. P. Blaha, K. Schwarz, J. Luitz, WIEN97, FPLAPW package for calculating crystal properties, TU Vienna
• 9. H. Ohno, J. Magn. Magn. Mater., 200, 110, 1999

Identifiers

DOI

10.12693/APhysPolA.100.319