Negative Differential Resistance and Super-Poissonian Shot Noise in a System of Single Electron Transistors

• Authors: G. Michałek , B. Bułka
• Languages of publication: EN

Abstracts

EN

Currents and their fluctuations in two capacitively coupled single electron transistors were studied within the sequential tunneling approach. A special attention was focused on the effect of the negative differential resistance, which appears due to the Coulomb interactions of accumulated charges on both the single electron transistors. In this case large polarization fluctuations are activated, which results in a significant enhancement of the current shot noise.

Keywords

EN

73.23.Hk; 73.40.Gk; 73.50.Td

Discipline

• 73.23.Hk: Coulomb blockade; single-electron tunneling
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 73.50.Td: Noise processes and phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 3
• Pages: 431-436

Dates

published

2001-09

received

2001-06-01

Contributors

author

G. Michałek

• Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland

author

B. Bułka

• Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.100.431