Title variants
Languages of publication
Abstracts
Currents and their fluctuations in two capacitively coupled single electron transistors were studied within the sequential tunneling approach. A special attention was focused on the effect of the negative differential resistance, which appears due to the Coulomb interactions of accumulated charges on both the single electron transistors. In this case large polarization fluctuations are activated, which results in a significant enhancement of the current shot noise.
Discipline
Journal
Year
Volume
Issue
Pages
431-436
Physical description
Dates
published
2001-09
received
2001-06-01
Contributors
author
- Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland
author
- Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland
References
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- 3. H. Birk, M.J.M. de Jong, C. Schonenberger, Phys. Rev. Lett., 75, 1610, 1995
- 4. G. Iannaccone, G. Lombardi, M. Macucci, B. Pellegrini, Phys. Rev. Lett., 80, 1054, 1998
- 5. Quantum Transport and Dissipation, Eds. T. Dittrich, P. Hanggi, G.-L. Ingold, B. Kramer, G. Schon, W. Zwerger, Wiley-VCH Verlag, New York 1998
- 6. K.M. van Vliet, J.R. Fassett, in: Fluctuation Phenomena in Solids, Ed. R.E. Burgess, Academic Press, New York 1965, p. 267
- 7. A.N. Korotkov, Phys. Rev. B, 49, 10381, 94; S. Hershfield, J.H. Davies, P. Hyldgaard, C.J. Stanton, J.W. Wilkins, Phys. Rev. B, 47, 1967, 1993
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n306kz