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Abstracts
Excitation of the intra-4f-shell luminescence near 1.5μm in silicon-rich silicon oxide is studied. Silicon-rich silicon oxide was produced by high dose implantation of Si^+ ions into SiO_2 layers grown on silicon. Erbium doping was also performed using implantation of Er^+ ions at an energy of 800 keV. An evidence is presented that transfer of energy from defects related to excess silicon in silica is the dominant mechanism of excitation of Er^{3+} for optical pumping in the UV-blue wavelength range. Si-nanocrystals created by annealing at 1100ºC rather compete for excitation with erbium than transfer energy to Er^{3+}.
Discipline
Journal
Year
Volume
Issue
Pages
437-442
Physical description
Dates
published
2001-09
received
2001-06-01
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institut für Halbleiterphysik, J. Kepler Universität, 4040 Linz, Austria
References
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- 2. J. Palm, F. Gan, B. Zhang, J. Michel, L.C. Kimerling, Phys. Rev. B, 54, 17603, 1996
- 3. P.N. Favennec, H. L'Harridon, D. Mountonnet, M. Salvi, M. Gauneau, in: Rare Earth Doped Semiconductors, Eds. G.S. Pomrenke, P.B. Klein, D.W. Langer, Mater. Res. Soc. Proc., Vol. 301, 1993, p. 301
- 4. J.H. Shin, M. Kim, S. Seo, C. Lee, Appl. Phys. Lett., 72, 1092, 1998
- 5. P.G. Kik, M.L. Brongersma, A. Polman, Appl. Phys. Lett., 76, 2325, 2000
- 6. Y. Kanemitsu, in: Light Emission in Silicon, Semiconductors and Semimetals, Vol. 49, Ed. D.J. Lockwood, Academic Press, New York 1997, p. 157
- 7. G. Franzo, V. Vinciguerra, F. Priolo, Appl. Phys. A, 69, 3, 1999
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n304kz