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2001 | 100 | 3 | 397-402
Article title

From Localised to Ballistic Excitons in GaAs Quantum Wells

Content
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Languages of publication
EN
Abstracts
EN
The lateral motion of excitons in GaAs quantum wells is studied by means of spatially resolved photoluminescence. We show that at low temperatures (4.2 K) the exciton motion evolves from localised excitons (zero mobility) in thin quantum wells to extremely high mobilities in wide wells. We find that for the widest quantum well investigated the observed motion cannot be explained by simple exciton diffusion and must be explained by the propagation of ballistic exciton polaritons.
Keywords
EN
Year
Volume
100
Issue
3
Pages
397-402
Physical description
Dates
published
2001-09
received
2001-06-01
Contributors
author
  • High Field Magnet Laboratory, Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525ED Nijmegen, The Netherlands
  • High Field Magnet Laboratory, Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525ED Nijmegen, The Netherlands
author
  • High Field Magnet Laboratory, Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525ED Nijmegen, The Netherlands
author
  • Angewandte Festköperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany
author
  • Angewandte Festköperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany
author
  • Angewandte Festköperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n302kz
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