From Localised to Ballistic Excitons in GaAs Quantum Wells

• Authors: F. Pulizzi , P. Christianen , J. Maan , S. Eshlaghi , D. Reuter , A. Wieck
• Languages of publication: EN

Abstracts

EN

The lateral motion of excitons in GaAs quantum wells is studied by means of spatially resolved photoluminescence. We show that at low temperatures (4.2 K) the exciton motion evolves from localised excitons (zero mobility) in thin quantum wells to extremely high mobilities in wide wells. We find that for the widest quantum well investigated the observed motion cannot be explained by simple exciton diffusion and must be explained by the propagation of ballistic exciton polaritons.

Keywords

EN

71.35.-y; 71.36.+c

Discipline

• 71.36.+c: Polaritons (including photon-phonon and photon-magnon interactions)
• 71.35.-y: Excitons and related phenomena

• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 3
• Pages: 397-402

Dates

published

2001-09

received

2001-06-01

Contributors

author

F. Pulizzi

• High Field Magnet Laboratory, Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525ED Nijmegen, The Netherlands

author

P. Christianen

• High Field Magnet Laboratory, Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525ED Nijmegen, The Netherlands

author

J. Maan

• High Field Magnet Laboratory, Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525ED Nijmegen, The Netherlands

author

S. Eshlaghi

• Angewandte Festköperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany

author

D. Reuter

• Angewandte Festköperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany

author

A. Wieck

• Angewandte Festköperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany

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Identifiers

DOI

10.12693/APhysPolA.100.397