PL EN


Preferences help
enabled [disable] Abstract
Number of results
2001 | 100 | 3 | 373-378
Article title

Hydrogen Tuning of (InGa)(AsN) Optical Properties

Content
Title variants
Languages of publication
EN
Abstracts
EN
The effects of atomic hydrogen irradiation on the optical properties of (InGa)(AsN) single quantum wells investigated by means of photoluminescence spectroscopy. For increasing hydrogen dose, the photoluminescence band peak energy of each nitrogen-containing sample blue-shifts and for high hydrogen dose it reaches that of a corresponding nitrogen-free reference sample. This effect is accompanied by a broadening of the photoluminescence band line width and by a decrease in the photoluminescence efficiency. Thermal annealing at 550ºC fully restores the original band gap value and the photoluminescence line width of the sample before hydrogenation. An interpretation of these phenomena is proposed in terms of an H perturbation of the charge distribution around the strongly electronegative N atoms, leading most likely to the formation of H-N complexes, and to an ensuing electronic passivation of nitrogen.
Keywords
EN
Publisher

Year
Volume
100
Issue
3
Pages
373-378
Physical description
Dates
published
2001-09
received
2001-06-01
Contributors
  • INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy
author
  • INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy
author
  • INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy
author
  • INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy
author
  • INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy
author
  • INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy
author
  • INFM-Dipartimento di Fisica, Università degli Studi di Roma "La Sapienza", Piazzale A. Moro 2, 00185 Roma, Italy
author
  • INFM-Dipartimento di Fisica, Università di Parma, 43010 Fontanini (Parma), Italy
author
  • Universität Würzburg, Technische Physik, Am Hublaund, 97074 Würzburg, Germany
author
  • Universität Würzburg, Technische Physik, Am Hublaund, 97074 Würzburg, Germany
author
  • Universität Würzburg, Technische Physik, Am Hublaund, 97074 Würzburg, Germany
References
  • 1. Hydrogen in Semiconductors, Eds. J.I. Pankove, N.M. Johnson, Semiconductors and Semimetals, Vol. 34, Academic Press, New York 1991
  • 2. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, Jpn. J. Appl. Phys., 35, 1273, 1996
  • 3. P.R.C. Kent, A. Zunger, Phys. Rev. Lett., 86, 2609, 2001
  • 4. P.N. Hai, W.M. Chen, I. Buyanova, X.P. Xin, C.W. Tu, Appl. Phys. Lett., 77, 1843, 2000
  • 5. T. Mattila, S.H. Wei, A. Zunger, Phys. Rev. B, 60, R11245, 1999
  • 6. E.D. Jones, N.A. Modine, A.A. Allerman, S.R. Kurtz, A.F. Wright, S.T. Tozer, X. Wei, Phys. Rev. B, 60, 4430, 1999
  • 7. W. Shan, W. Walukiewicz, J.W. Ager III, E.E. Aller, J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz, Phys. Rev. Lett., 82, 1221, 1999
  • 8. A. Lindsay, E.P. O'Reilly, Solid State Commun., 112, 443, 1999
  • 9. J. Neugebauer, C. Van de Walle, Phys. Rev. Lett., 75, 4452, 1995
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n301kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.