Breakdown of the Quantum Hall Effect

• Authors: D. Maude , L. Rigal , W. Desrat , M. Potemski , J. Portal , L. Eaves , Z. Wasilewski , A. Toropov , G. Hill
• Languages of publication: EN

Abstracts

EN

The breakdown of the dissipationless conductance in the integer and fractional quantum Hall effect regime is reviewed. The temperature dependence of the critical current and of the critical magnetic field at breakdown bears a striking resemblance to the phase diagram of the phenomenological two-fluid Gorter-Casimir model for superconductivity. In addition, a remarkably simple scaling law exists between different filling factors.

Keywords

EN

71.10.Pm; 74.25.Dw

Discipline

• 71.10.Pm: Fermions in reduced dimensions (anyons, composite fermions, Luttinger liquid, etc.)(for anyon mechanism in superconductors, see 74.20.Mn)
• 74.25.Dw: Superconductivity phase diagrams

• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 2
• Pages: 213-226

Dates

published

2001-08

received

2001-06-01

Contributors

author

D. Maude

• Grenoble High Magnetic Field Laboratory, Max Planck Institut, Festkörperforschung and Centre National de la Recherche Scientifique, BP166, 38042 Grenoble, France

author

L. Rigal

• Grenoble High Magnetic Field Laboratory, Max Planck Institut, Festkörperforschung and Centre National de la Recherche Scientifique, BP166, 38042 Grenoble, France

author

W. Desrat

• Grenoble High Magnetic Field Laboratory, Max Planck Institut, Festkörperforschung and Centre National de la Recherche Scientifique, BP166, 38042 Grenoble, France

author

M. Potemski

• Grenoble High Magnetic Field Laboratory, Max Planck Institut, Festkörperforschung and Centre National de la Recherche Scientifique, BP166, 38042 Grenoble, France

author

J. Portal

• Grenoble High Magnetic Field Laboratory, Max Planck Institut, Festkörperforschung and Centre National de la Recherche Scientifique, BP166, 38042 Grenoble, France

author

L. Eaves

• Department of Physics, University of Nottingham, Nottingham, NG7 2RG, U.K.

author

Z. Wasilewski

• Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada

author

A. Toropov

• Institute of Semiconductor Physics, Novossibirsk 630090, Russia

author

G. Hill

• Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 4DU, U.K.

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Identifiers

DOI

10.12693/APhysPolA.100.213