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2001 | 100 | 2 | 227-236
Article title

Ferromagnetism in II-VI Based Semiconductor Structures

Content
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EN
Abstracts
EN
The experimental results on carrier-induced ferromagnetic interaction in II-VI diluted magnetic semiconductors are shortly reviewed and analyzed in the light of the mean field approximation. We particularly take the point of view of the experimentalist to emphasize (i) points which are easily understood within this simple model (as the role of the detailed structure of the valence band) and hence should be incorporated into more sophisticated models, and (ii) points which are not taken into account in the mean field model (e.g., disorder effects) and hence call for more elaborate descriptions. We particularly discuss the case of a low carrier density, and show that the situation appears as experimentally very different in the highly disordered 3D layers and in the modulation doped 2D quantum wells.
Keywords
Publisher

Year
Volume
100
Issue
2
Pages
227-236
Physical description
Dates
published
2001-08
received
2001-06-01
Contributors
author
  • Laboratoiré de Spectrométrie Physique, CNRS-Université J. Fourier, Grenoble, BP87, 38402 Saint Martin d'Hères cedex, France
author
  • Laboratoiré de Spectrométrie Physique, CNRS-Université J. Fourier, Grenoble, BP87, 38402 Saint Martin d'Hères cedex, France
author
  • Laboratoiré de Spectrométrie Physique, CNRS-Université J. Fourier, Grenoble, BP87, 38402 Saint Martin d'Hères cedex, France
author
  • Laboratoiré de Spectrométrie Physique, CNRS-Université J. Fourier, Grenoble, BP87, 38402 Saint Martin d'Hères cedex, France
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Science, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n207kz
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