The Role of Internal Electric Fields in III-N Quantum Structure

• Authors: P. Perlin , S. Łepkowski , H. Teisseyre , T. Suski , N. Grandjean , J. Massies
• Languages of publication: EN

Abstracts

EN

Binary nitrides: of wurtzite GaN, AlN, InN, and their solid solutions represent a family of semiconductors of crucial importance for modern optoelectronics. Strained quantum wells, like GaN/AlGaN and specially InGaN/GaN, form active layers of the light emitters working in green-UV part of the spectrum. The operation of these devices strongly depends on the emission spectra of considered quantum structures which are greatly influenced by the presence of built-in electric fields. The electric field acting via quantum confined Stark effect in the mentioned structures changes the energies and intensity of the emitted light. The effect can lead to the spectral shift of a photo- and electroluminescence by many hundreds of meV. In this review we will briefly cover the influence of internal electric fields on both optical and electrical properties of nitride based heterostructures and quantum wells. We would like to draw reader's attention to the usefulness of high-pressure investigation in the study of electric fields in nitrides and to show how the interpretation of these experiments influences the way we calculate the electric fields in the quantum structures.

Keywords

EN

78.20.Hp; 78.55.Cr; 78.67.Hc

Discipline

• 78.55.Cr: III-V semiconductors
• 78.67.Hc: Quantum dots

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 2
• Pages: 261-270

Dates

published

2001-08

received

2001-06-01

Contributors

author

P. Perlin

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

S. Łepkowski

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

H. Teisseyre

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

T. Suski

• High Pressure Research Center "Unipress", Sokołowska 29/37, 01-142 Warszawa, Poland

author

N. Grandjean

• CRHEA - Centre National de la Recherche Scientifique, 06560 Valbonne, France

author

J. Massies

• CRHEA - Centre National de la Recherche Scientifique, 06560 Valbonne, France

References

• 1. H. Morkoc, Nitride Semiconductors and Devices, Springer-Verlag, Berlin 1999
• 2. F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. B, 56, 10024, 1997; V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, P. Lugli, Phys. Rev. B, 60, 8849, 1999
• 3. M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefevre, P. Bigenwald, Phys. Rev. B, 60, 1496, 1999
• 4. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, I. Akasaki, Jpn. J. Appl. Phys. 2, 36, L382, 1997
• 5. S.P. Łepkowski, H. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies, Appl. Phys. Lett., in print
• 6. P. Perlin, C. Kisielowski, V. Iota, B.A. Weinstein, L. Mattos, N.A. Shapiro, J. Kruger, E.R. Weber, J. Yang, Appl. Phys. Lett., 73, 2778, 1998
• 7. L. Hsu, W. Walukiewicz, Appl. Phys. Lett., 73, 339, 1998
• 8. L. Hsu, W. Walukiewicz, Appl. Phys. Lett., 74, 2405, 1999
• 9. M. Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, X. Hu, G. Simin, P. Prystawko, M. Leszczyński, I. Grzegory, S. Porowski, R. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu, Appl. Phys. Lett., 76, 3807, 2000
• 10. E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, X. Hu, M. Asif Khan, M.S. Shur, R. Gaska, D. Maude, Appl. Phys. Lett., 77, 2551, 2000
• 11. P. Kozodoy, M. Hansen, S.P. DenBaars, U.K. Mishra, Appl. Phys. Lett., 74, 3681, 1999
• 12. P. Kozodoy, Y.P. Smorchkova, M. Hansen, H. Xing, S.P. DenBaars, U.K. Mishra, Appl. Phys. Lett., 75, 2444, 1999
• 13. A.D. Bykhovski, V.V. Kaminski, M.S. Shur, Q.C. Chen, M.A. Khan, in: Proc. III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium, Eds. D.K. Gaskill, C.D. Brandt, R.J. Nemanich, Mater. Res. Soc., Pittsburgh (PA) 1996, p. 75
• 14. R. Gaska, M.S. Shur, A.D. Bykhovski, J.W. Yang, M.A. Khan, V.V. Kaminski, S.M. Soloviov, Appl. Phys. Lett., 76, 3956, 2000
• 15. P. Perlin, V. Iota-Herbei, B.A. Weinstein, P. Wiśniewski, T. Suski, P.G. Eliseev, M. Osinski, Appl. Phys. Lett., 70, 2993, 1997
• 16. W. Shan, P. Perlin, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, D.P. Bour, Appl. Phys. Lett., 73, 1613, 1998
• 17. W. Shan, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, D.P. Bour, Phys. Rev. B, 58, R 10191, 1998
• 18. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Appl. Phys. Lett., 69, 4188, 1996
• 19. P. Perlin, T. Suski, P. Wiśniewski, I. Gorczyca, S. Łepkowski, M. Hansen, S.P. DenBaars, B. Damilano, N. Grandjean, J. Massies, in: Proc. MRS Fall Meeting, Boston 2000, Eds. U.K. Mishra, M.S. Shur, C.M. Wetzel, B. Gil, K. Kishi, in press
• 20. P. Perlin, I. Gorczyca, T. Suski, P. Wiśniewski, S. Łepkowski, N.E. Christensen, A. Svane, M. Hansen, S.P. DenBaars, B. Damilano, N. Grandjean, J. Massie, Phys. Rev. B, in press
• 21. L. Bellaiche, T. Mattila, L.W. Wang, S.H. Wei, A. Zunger, Appl. Phys. Lett., 74, 1842, 1999
• 22. J.A. Tuchman, I.P. Herman, Phys. Rev. B, 45, 11929, 1992
• 23. D. Bertho, J.M. Jancu, C. Juanin, Phys. Rev. B, 48, 2452, 1993
• 24. R.J. Thomas, M.S. Boley, H.R. Chandrasekhar, M. Chandrasekhar, C. Parks, A.K. Ramdas, J. Han, M. Kobayashi, R.L. Gunshor, Phys. Rev. B, 49, 2181, 1994
• 25. G. Vaschenko, D. Patel, C.S. Menoni, S. Keller, U.K. Mischra, S.P. DenBaars, Appl. Phys. Lett., 78, 640, 2001
• 26. K. Shimada, T. Sota, K. Suzuki, H. Okumura, Jpn. J. Appl. Phys. Part 2, 37, L1421, 1998
• 27. A.F. Wright, K. Leung, M. van Schilfgaarde, Appl. Phys. Lett., 78, 189, 2001
• 28. F. Bernardini, private communication

Identifiers

DOI

10.12693/APhysPolA.100.261