Bands, Bonds, and Polarizations in Nitrides - from Electronic Orbitals to Electronic Devices

• Authors: J. Majewski , G. Zandler , P. Vogl
• Languages of publication: EN

Abstracts

EN

A key property of the nitrides is the fact that they possess large spontaneous and piezoelectric polarization fields that allow a significant tailoring of the carrier dynamics and optical properties of nitride devices. In this paper, based on first-principles calculations of structural and electronic properties of bulk nitrides and their heterostructure, we investigate the potential of this novel material class for modern device applications by performing self-consistent Monte Carlo simulations. Our studies reveal that the nitride based electronic devices have characteristics that predispose them for high power and high frequency applications. We demonstrate also that transistor characteristics are favorably influenced by the internal polarization induced electric fields.

Keywords

EN

73.40.Kp; 77.65.Ly

Discipline

• 77.65.Ly: Strain-induced piezoelectric fields
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 2
• Pages: 249-260

Dates

published

2001-08

received

2001-06-01

Contributors

author

J. Majewski

• Walter Schottky Institute, Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany

author

G. Zandler

• Walter Schottky Institute, Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany

author

P. Vogl

• Walter Schottky Institute, Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany

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Identifiers

DOI

10.12693/APhysPolA.100.249