The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer

• Authors: A. Özdemir , M. Abdolahpour Salari , A. Kökce , N. Uçar
• Languages of publication: EN

Abstracts

EN

Au/polymer P2ClAn(H₃BO₃)/n-GaAs Schottky barrier diodes, where P2ClAn stands for poly(2-chloroaniline), have been fabricated. To fabricate Schottky diodes with polymer interface, n-type GaAs wafer was used. The P2ClAn polymer solution was applied on the front face of the n-GaAs wafer by a pipette. The P2ClAn emeraldine salt was chemically synthesized by using boric acid (H₃BO₃). Schottky diode parameters, such as ideality factor, barrier height and series resistance have been measured, as functions of hydrostatic pressure, using the current-voltage technique. The ideality factor values of Au/P2ClAn/n-GaAs Schottky barrier diodes have decreased from 3.38 to 3.01, the barrier height has increased from 0.653 to 0.731 eV at 0.36 kbar and series resistances were ranging from 14.95 to 14.69. The results obtained from I-V characteristics of Au/P2ClAn/n-GaAs Schottky barrier diodes show that pressure treatment improves the rectifying properties of the diodes. These diodes can be used as pressure-sensitive capacitors, due to pressure-dependence of diode parameters.

Keywords

EN

73.40.Kp; 73.20.At; 74.62.Fj

Discipline

• 74.62.Fj: Effects of pressure
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 73.20.At: Surface states, band structure, electron density of states

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 3
• Pages: 1118-1121

Dates

published

2017-09

Contributors

author

A. Özdemir

• Süleyman Demirel University, Physics Department, Isparta, Turkey

author

M. Abdolahpour Salari

• Atatürk University, Physics Department, Erzurum, Turkey

author

A. Kökce

• Süleyman Demirel University, Physics Department, Isparta, Turkey

author

N. Uçar

• Süleyman Demirel University, Physics Department, Isparta, Turkey

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Identifiers

DOI

10.12693/APhysPolA.132.1118