A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications

• Authors: A. Al-Ghamdi , O. Al-Hartomy , R. Gupta , F. El-Tantawy , E. Taskan , H. Hasar , F. Yakuphanoglu
• Languages of publication: EN

Abstracts

EN

We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using SiO_2 and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and SiO_2. It is seen that the ideality factor (1.82) of the Al/p-Si/SiO_2/DNA/Ag diode is lower than that (3.31) of the Al/p-Si/SiO_2/Ag diode. This indicates that the electronic performance of DNA/Si junction was better than that of SiO_2/Si junction. The interface states of the Al/p-Si/SiO_2/DNA/Ag and Al/p-Si/SiO_2/Ag junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.

Keywords

EN

73.40.Jn; 81.05.Fb; 73.30.+y

Discipline

• 73.40.Jn: Metal-to-metal contacts
• 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)
• 81.05.Fb: Organic semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 3
• Pages: 673-677

Dates

published

2012-03

received

2011-06-21

(unknown)

2012-01-02

(unknown)

2012-12

Contributors

author

A. Al-Ghamdi

• Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia

author

O. Al-Hartomy

• Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia
• Department of Physics, Faculty of Science, Tabuk University, Tabuk 71491, Saudi Arabia

author

R. Gupta

• Engineering Research Center, North Carolina A & T State University, North Carolina 27411, USA

author

F. El-Tantawy

• Department of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt

author

E. Taskan

• Department of Environmental Engineering, Firat University, Elaziğ, Turkey
• Center for Biotechnology Research, Firat University, Elazig, Turkey

author

H. Hasar

• Department of Environmental Engineering, Firat University, Elaziğ, Turkey
• Center for Biotechnology Research, Firat University, Elazig, Turkey

author

F. Yakuphanoglu

• Department of Physics, Faculty of Science, Firat University, Elazig, Turkey

References

• 1. T. Maeda, S. Takagi, T. Ohnishi, M. Lippmaa, Mater. Sci. Semicond. Process. 9, 706 (2006)
• 2. M. Shah, M.H. Sayyad, Kh.S. Karimov, M.M. Tahir, Physica B 405, 1188 (2010)
• 3. M. Shah, M.H. Sayyad, Kh.S. Karimov, M.M. Tahir, Optoelectr. Adv. Mater. - Rapid Comm. (OAM-RC) 3, 831 (2009)
• 4. F. Yakuphanoglu, Synth. Met. 158, 108 (2008)
• 5. S. Aydogan, Ü. Incekara, A.R. Deniz, A. Türüt, Microelectron. Eng. 87, 2525i (2010)
• 6. J.S. Park, B.R. Lee, J.M. Lee, J.S. Kim, S.O. Kim, M.H. Song, Appl. Phys. Lett. 96, 243306 (2010)
• 7. S. Aydogan, K. Çinar, H. Asil, C. Coskun, A. Türüt, J. Alloys Comp. 476, 913 (2009)
• 8. P. Hanselaer, W.H. Laflére, R.L. Van Meirhaeghe, F. Cardon, Appl. Phys. A 39, 129 (1986)
• 9. R.L. Van Meirhaeghe, W.H. Laflére, F. Cardon, J. Appl. Phys. 76, 403 (1994)
• 10. P. Hanselaer, W.H. Laflére, R.L. Van Meirhaeghe, F. Cardon, Appl. Phys. 56, 2309 (1984)
• 11. Ş. Aydoğan, M. Sağlam, A. Türüt, Vacuum 77, 269 (2005)
• 12. V. Kazukauskas, M. Pranaitis, A. Arlauskas, O. Krupka, F. Kajzar, Z. Essaidi, B. Sahraoui, Opt. Mater. 32, 1629 (2010)
• 13. R.K. Gupta, V. Saraf, Curr. Appl. Phys. 9, S149 (2009)
• 14. S. Okur, F. Yakuphanoglu, M. Ozsoz, P. Kara Kadayifcilar, Microelectron. Eng. 86, 2305 (2009)
• 15. O. Gullu, A. Turut, J. Alloys Comp. 509, 571 (2011)
• 16. O. Gullu, Microelectron. Eng. 87, 648 (2010)
• 17. L. Cai, H. Tabata, T. Kawai, Appl. Phys. Lett. 77, 3105 (2000)
• 18. A.Y. Kasumov, M. Kociak, S. Gueron, B. Reulet, V.T. Volkov, D.V. Klinov, H. Bouchiat, Science 291, 280 (2001)
• 19. A.J. Storm, J. Van Noort, S. de Vries, C. Dekker, Appl. Phys. Lett. 79, 3881 (2001)
• 20. R.K. Gupta, F. Yakuphanoglu, H. Hasar, A.A. al-Khedhairy, Synthetic Met. 161, 2011 (2011)
• 21. G. Muyzer, E. De Waal, A.G. Uitterlinden, Appl. Environmen. Microbiol. 59, 695 (1993)
• 22. E.H. Rhoderick, Metal-Semiconductor Contacts, Oxford University Press, Oxford 1978
• 23. Y. Selzer, A. Salomon, D. Cahen, J. Phys. Chem. B 106, 10432 (2002)
• 24. Y.J. Liu, H.Z. Yu, Chem. Phys. Chem. 3, 799 (2002)
• 25. S. Acar, S. Karadeniz, N. Tuğluoğlu, A.B. Selçuk, M. Kasap, Appl. Surf. Sci. 233, 373 (2004)
• 26. A. Tataroğlu, Ş. Altındal, M.M. Bülbül, Nucl. Instrum. Methods Phys. Res. A 568, 863 (2006)
• 27. T. Kılıcoglu, M.E. Aydın, G. Topal, M.A. Ebeoglu, H. Saygılı, Synthetic Met. 157, 540 (2007)
• 28. F. Yakuphanoglu, B.J. Lee, Physica B 390, 151 (2007)
• 29. M.E. Aydina, F. Yakuphanoglu, J. Phys. Chem. Solids 68, 1770 (2007)
• 30. F. Yakuphanoglu, B.-J. Lee, Physica B 390, 151 (2007)
• 31. M.E. Aydin, F. Yakuphanoglu, Jae-Hoon Eom, Do-Hoon Hwang, Physica B 387, 306 (2007)
• 32. M. Çakar, N. Yıldırım, H. Doğan, A. Türüt, Appl. Surf. Sci. 252, 2209 (2006)
• 33. Ş. Aydoğan, M. Sağlam, A. Türüt, Polymer 46, 10982 (2005)
• 34. I.H. Campbell, S. Rubin, T.A. Zawodzinski, J.D. Kress, R.L. Martin, D.L. Smith, N.N. Barashkov, J.P. Ferraris, Phys. Rev. B 54, 14321 (1996)
• 35. E.H. Nicollian, A. Goetzberger, Bell Syst. Technol. J. 46, 1055 (1967)
• 36. I. Dökme, Ş. Altındal, T. Tunç, I. Uslu, Microelectron. Reliab. 50, 39 (2010)
• 37. W.A. Hill, C.C. Coleman, Solid State Electron. 23, 987 (1980)

Identifiers

DOI

10.12693/APhysPolA.121.673