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Number of results
Journal
2014 | 12 | 10 | 725-729
Article title

Flash memory cells data loss caused by total ionizing dose and heavy ions

Content
Title variants
Languages of publication
EN
Abstracts
EN
The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.
Publisher

Journal
Year
Volume
12
Issue
10
Pages
725-729
Physical description
Dates
published
1 - 10 - 2014
online
16 - 8 - 2014
Contributors
author
  • National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation, agpet@spels.ru
  • National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation
  • National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation
  • National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation
  • National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation
References
  • [1] S. Gerardin et al., IEEE T. Nucl. Sci. 60, 1953 (2013) http://dx.doi.org/10.1109/TNS.2013.2254497[Crossref]
  • [2] D. N. Nguyen, S. M. Guertin, G. M. Swift, A. H. Johnston, IEEE T. Nucl. Sci. 46, 1744 (1999) http://dx.doi.org/10.1109/23.819148[Crossref]
  • [3] E. S. Snyder, P. J. McWhirter, T. A. Dellin, J. D. Sweetman, IEEE T. Nucl. Sci. 36, 2131 (1989) http://dx.doi.org/10.1109/23.45415[Crossref]
  • [4] M. Vujisic, K. Stankovic, E. Dolicanin, P. Osmokrovic, Radiat. Eff. Defect. S., 165,5, 362 (2010) http://dx.doi.org/10.1080/10420151003664747[Crossref]
  • [5] E. Dolicanin, Gamma ray effects on flash memory cell arrays, Nucl. Technol. Radiat. 27, 284 (2012) http://dx.doi.org/10.2298/NTRP1203284D[Crossref]
  • [6] G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, A. Candelori, IEEE T. Nucl. Sci. 6, 3304 (2004) http://dx.doi.org/10.1109/TNS.2004.839146[Crossref]
  • [7] N. Butt, M. Alam, Single Event Upsets in Floating Gate Memory Cells, Proc. Int. Reliab. Phys. Symp. (IRPS), Apr 2008, 547 (2008)
  • [8] A. I. Chumakov et al., Radiat. Meas. 30, 547 (1999) http://dx.doi.org/10.1016/S1350-4487(99)00227-9[Crossref]
  • [9] F. Irom, D. N. Nguyen, G. R. Allen, S. A. Zajac Scaling Effects in Highly Scaled Commercial Nonvolatile Flash Memories, IEEE Radiation Effects Data Workshop (REDW), 1 (IEEE, 2012)
  • [10] T. R. Oldham et al., TID and SEE response of advanced Samsung and Micron 4G NAND flash memories for the NASA MMS mission, IEEE Radiation Effects Data Workshop (REDW), Quebec, Canada, 114 (IEEE, 2009)
  • [11] G. Cellere, A. Paccagnella, L. Larcher, A. Chimenton, IEEE T. Nucl. Sci. 49, 547 (2002) http://dx.doi.org/10.1109/TNS.2002.805339[Crossref]
  • [12] S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti, E. Greco, IEEE T. Nucl. Sci. 58, 827 (2011) http://dx.doi.org/10.1109/TNS.2011.2122269[Crossref]
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-014-0503-6
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