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Journal
2014 | 12 | 10 | 725-729
Article title

Flash memory cells data loss caused by total ionizing dose and heavy ions

Content
Title variants
Languages of publication
EN
Abstracts
EN
The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.
Publisher
Journal
Year
Volume
12
Issue
10
Pages
725-729
Physical description
Dates
published
1 - 10 - 2014
online
16 - 8 - 2014
References
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  • [9] F. Irom, D. N. Nguyen, G. R. Allen, S. A. Zajac Scaling Effects in Highly Scaled Commercial Nonvolatile Flash Memories, IEEE Radiation Effects Data Workshop (REDW), 1 (IEEE, 2012)
  • [10] T. R. Oldham et al., TID and SEE response of advanced Samsung and Micron 4G NAND flash memories for the NASA MMS mission, IEEE Radiation Effects Data Workshop (REDW), Quebec, Canada, 114 (IEEE, 2009)
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  • [12] S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti, E. Greco, IEEE T. Nucl. Sci. 58, 827 (2011) http://dx.doi.org/10.1109/TNS.2011.2122269[Crossref]
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-014-0503-6
Identifiers
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