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Journal
2013 | 11 | 2 | 231-238
Article title

Distributions of electric parameters in MOS structures on 3C-SiC substrate

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EN
Abstracts
EN
In this work studies of some electrical parameters of the MOS structure based on 3C-SiC substrate are presented. The effective contact potential difference ϕMS, the barrier height at the gate-dielectric interface E
BG and the flat-band in semiconductor voltage V
FB were measured using several electric and photoelectric techniques. Values of these parameters obtained on structures with different gate areas decrease monotonically with increasing parameter R, defined as the ratio of the gate perimeter to the gate area. Such behavior confirmed results obtained on MOS structures on silicon substrate and also supported our hypothesis that the mechanical stress in the dielectric layer under the metal gate causes non uniform distribution of some parameters over the gate area of MOS structure.
Publisher
Journal
Year
Volume
11
Issue
2
Pages
231-238
Physical description
Dates
published
1 - 2 - 2013
online
9 - 2 - 2013
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-012-0116-x
Identifiers
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