Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

• Authors: Ozlem Celik , Engin Tiras , Sukru Ardali , Sefer Lisesivdin , Ekmel Ozbay
• Languages of publication: EN

Abstracts

EN

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.

Keywords

EN

Hall effect; LO phonon energy; AlGaN/GaN; Raman spectra; infrared spectra

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2012
• Volume: 10
• Issue: 2
• Pages: 485-491

Dates

published

1 - 4 - 2012

online

31 - 3 - 2012

Contributors

author

Ozlem Celik

• Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir, Turkey

author

Engin Tiras

• Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir, Turkey

author

Sukru Ardali

• Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir, Turkey

author

Sefer Lisesivdin

• Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500, Ankara, Turkey

author

Ekmel Ozbay

• Nanotechnology Research Center, Department of Physics, and Department of Electrical and Electronics Engineering, Bilkent University, Ankara, Turkey

References

• [1] B. A. Danilchenko et al., Phys. Status Solidi B 243, 1529 (2006) http://dx.doi.org/10.1002/pssb.200565445[Crossref]
• [2] S. J. Pearton, J. C. Zolper, R. J. Shul, F. Ren, J. Appl. Phys. 86, 1 (1999) http://dx.doi.org/10.1063/1.371145[Crossref]
• [3] S. B. Lisesivdin et al., Appl. Phys. Lett. 91 102113 (2007) http://dx.doi.org/10.1063/1.2778453
• [4] M. A. Khan, A. Bhattarai, J. N. Kuznia, D. T. Olson, Appl. Phys. Lett. 63, 1214 (1993) http://dx.doi.org/10.1063/1.109775[Crossref]
• [5] Y. F. Wu et al., IEEE Electr. Device L. 17, 455 (1996) http://dx.doi.org/10.1109/55.536291[Crossref]
• [6] A. F. M. Anwar, Shangli Wu, Richard T. Webster, IEEE T. Electron Dev. 48, 567 (2001) http://dx.doi.org/10.1109/16.906452[Crossref]
• [7] S. B. Lisesivdin, A. Yıldız, M. Kasap, Optoelectron. Adv. Mat. 1, 467 (2007)
• [8] S. B. Lisesivdin, S. Acar, M. Kasap, S. Ozcelik, S. Gokden, E. Ozbay, Semicond. Sci. Tech. 22, 543 (2007) http://dx.doi.org/10.1088/0268-1242/22/5/015[Crossref]
• [9] W. Knap et al., J. Cryst. Growth 281, 194 (2005) http://dx.doi.org/10.1016/j.jcrysgro.2005.03.025[Crossref]
• [10] D. Zanato, S. Gokden, N. Balkan, B. K. Ridley W. J. Schaff, Semicond. Sci. Tech. 19, 427 (2004) http://dx.doi.org/10.1088/0268-1242/19/3/024[Crossref]
• [11] W. Knap et al., J. Cryst. Growth 281, 194 (2005) http://dx.doi.org/10.1016/j.jcrysgro.2005.03.025[Crossref]
• [12] S. B. Lisesivdin, S. Demirezen, M. D. Caliskan, A. Yıldız, M. Kasap, S. Ozcelik, E. Ozbay, Semicond. Sci. Tech. 23, 095008 (2008) http://dx.doi.org/10.1088/0268-1242/23/9/095008[Crossref]
• [13] A. Teke et al., New J. Phys. 11, 063031 (2009) http://dx.doi.org/10.1088/1367-2630/11/6/063031[Crossref]
• [14] S. Gokden, Phsy. Status Solidi A, 200, 369 (2003) http://dx.doi.org/10.1002/pssa.200306701[Crossref]
• [15] S. Gokden, Physica E, 23, 19 (2004) http://dx.doi.org/10.1016/j.physe.2003.11.272[Crossref]
• [16] E. Tiras, S. Altinoz, M. Cankurtaran, H. Celik, N. Balkan, J. Mater. Sci. 40, 6391 (2005) http://dx.doi.org/10.1007/s10853-005-1599-2[Crossref]
• [17] H. Morkoc, Handbook of nitride semiconductors and devices, vol. 2 (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008) http://dx.doi.org/10.1002/9783527628445[Crossref]
• [18] B. K. Ridley, B. E. Foutz, L. F. Eastman, Phys. Rev. B 61, 16862 (1999) http://dx.doi.org/10.1103/PhysRevB.61.16862[Crossref]
• [19] S. B. Lisesivdin, A. Yıldız, N. Balkan, M. Kasap, S. Ozcelik, E. Ozbay, J. Appl. Phys. 108, 013712 (2010) http://dx.doi.org/10.1063/1.3456008[Crossref]
• [20] Y. Li, Y. Zhang, Y. Zeng, J. Appl. Phys. 109, 073703 (2011) http://dx.doi.org/10.1063/1.3552417[Crossref]
• [21] L. Hsu, W. Walukievicz, Phys. Rev. B 56, 1520 (1997) http://dx.doi.org/10.1103/PhysRevB.56.1520[Crossref]
• [22] B. L. Gelmont, M. Shur, M. Sroscio, J. Appl. Phys. 77, 657 (1995) http://dx.doi.org/10.1063/1.359051[Crossref]
• [23] W.Walukiewicz,H. E. Ruda, J. Lagowski, H. C. Gatos, Phys. Rev. B 30, 4571 (1984) http://dx.doi.org/10.1103/PhysRevB.30.4571[Crossref]
• [24] S. Gokden, R. Baran, N. Balkan, S. Mazzucato, Physica E, 24, 249 (2004) http://dx.doi.org/10.1016/j.physe.2004.04.042[Crossref]
• [25] D. Jena, A. C. Gossard, U. K. Mishra, Appl. Phys. Lett. 76, 1707 (2000) http://dx.doi.org/10.1063/1.126143[Crossref]
• [26] D. C. Look, H. Lu, W. J. Schaff, J. Jasinski, Z. Liliental-Weber, Appl. Phys. Lett. 80, 258 (2002) http://dx.doi.org/10.1063/1.1432742[Crossref]
• [27] K. Hirakawa, H. Sakaki, J. Yoshino, Appl. Phys. Lett. 45, 253 (1984) http://dx.doi.org/10.1063/1.95202[Crossref]
• [28] G. Abstreiter, M. Cardona, A. Pinczuk In: M. Cardona, G. Guntherodt (Eds.), Topics in applied physics, vol. 54 (Springer, Berlin, 1984) [WoS]
• [29] T. Kozawa, T. Kachi, H. Kano, Y. Taga, M. Hashimoto, J. Appl. Phys. 75, 1098 (1994) http://dx.doi.org/10.1063/1.356492[Crossref]
• [30] I. M. Tiginyanu et al., Phys. Rev. B 64, 233317 (2001) http://dx.doi.org/10.1103/PhysRevB.64.233317[Crossref]
• [31] M. Kuball, Surf. Interface Anal. 31, 987 (2001) http://dx.doi.org/10.1002/sia.1134[Crossref]
• [32] V. Yu. Davydov et al., Phys. Rev. B 58, 12899 (1998) http://dx.doi.org/10.1103/PhysRevB.58.12899[Crossref]
• [33] E. Tiras, M. Gunes, N. Balkan, W. J. Schaff, Phys. Status Solidi B 247, 189 (2009) http://dx.doi.org/10.1002/pssb.200945144[Crossref]
• [34] A. Asgari, M. Kalafi, Mater. Sci. Eng. C 26, 898 (2006) http://dx.doi.org/10.1016/j.msec.2005.09.002[Crossref]
• [35] O. Celik, E. Tiras, S. Ardali, S. B. Lisesivdin, E. Ozbay, Phys. Status Solidi C 8, 1625 (2011) http://dx.doi.org/10.1002/pssc.201000594[Crossref]

Identifiers

DOI

10.2478/s11534-011-0100-x