Study of density of interface states in MOS structure with ultrathin NAOS oxide

• Authors: Stanislav Jurečka , Hikaru Kobayashi , Woo-Byoung Kim , Masao Takahashi , Emil Pinčík
• Languages of publication: EN

Abstracts

EN

The quality of the interface region in a semiconductor device and the density of interface states (DOS) play important roles and become critical for the quality of the whole device containing ultrathin oxide films. In the present study the metal-oxide-semiconductor (MOS) structures with ultrathin SiO2 layer were prepared on Si(100) substrates by using a low temperature nitric acid oxidation of silicon (NAOS) method. Carrier confinement in the structure produces the space quantization effect important for localization of carriers in the structure and determination of the capacitance. We determined the DOS by using the theoretical capacitance of the MOS structure computed by the quantum mechanical approach. The development of the density of SiO2/Si interface states was analyzed by theoretical modeling of the C-V curves, based on the superposition of theoretical capacitance without interface states and additional capacitance corresponding to the charges trapped by the interface states. The development of the DOS distribution with the passivation procedures can be determined by this method.

Keywords

EN

semiconductor; density of states; interface states; MOS; capacitance

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2012
• Volume: 10
• Issue: 1
• Pages: 210-217

Dates

published

1 - 2 - 2012

online

3 - 12 - 2011

Contributors

author

Stanislav Jurečka

• DEF FEE Žilina University, Nálepku 1390, 03101, Liptovský Mikuláš, Slovakia

author

Hikaru Kobayashi

• DSMP ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, Japan

author

Woo-Byoung Kim

• DSMP ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, Japan

author

Masao Takahashi

• DSMP ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, Japan

author

Emil Pinčík

• Institute of Physics SAS, Dúbravská cesta 9, 84511, Bratislava, Slovakia

References

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Identifiers

DOI

10.2478/s11534-011-0092-6