Simulations of AlGaAs/GaAs heterojunction phototransistors

• Authors: Beata Ściana , Marek Panek , Artur Borczuch , Marek Tłaczała
• Languages of publication: EN

Abstracts

EN

Heterojunction bipolar phototransistors, based on GaAs technology, are widely used in optoelectronic integrated circuits. One of the methods to improve phototransistor performance is applying a delta-doped thin base, which causes both a higher current gain and a better time response. There is a lack of information about this kind of device in the literature. Our work presents the results of computer simulations of AlGaAs/GaAs n-p-n phototransistors, with a bulk-doped and delta-doped base working as two- and threeterminal devices. The characteristics and device parameters obtained clearly show that phototransistors with delta-doped base have higher sensitivity and a better time response compared to the structures with a bulk-doped base. Based on simulation results, we modified the epitaxial phototransistor structure with a double delta-doped base that should improve device performance.

Keywords

EN

phototransistor; AlGaAs/GaAs heterostructure; delta-doping; spectral characteristics; response time

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 4
• Pages: 1114-1121

Dates

published

1 - 8 - 2011

online

30 - 4 - 2011

Contributors

author

Beata Ściana

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

author

Marek Panek

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

author

Artur Borczuch

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

author

Marek Tłaczała

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

References

• [1] H.T. Lin, D.H. Rich, A. Larsson, J. Appl. Phys. 79, 8015 (1996) http://dx.doi.org/10.1063/1.362353[Crossref]
• [2] L. Chien-Chung, M. Wayne, J. S. Jr. Harris, F. Sugihwo, Appl. Phys. Lett. 76, 1188 (2000) http://dx.doi.org/10.1063/1.125978[Crossref]
• [3] Y. Wang, E.S. Yang, W.I. Wang, J. Appl. Phys. 74, 6978 (1993) http://dx.doi.org/10.1063/1.355048[Crossref]
• [4] H. Luo, H.K. Chan, Y. Chang, Y. Wang, IEEEPhotonic. Tech. L. 13, 708 (2001) http://dx.doi.org/10.1109/68.930422[Crossref]
• [5] J. C. Campbell, A.G. Dentai, G.-J. Qua, J.F. Ferguson, IEEEJ. QuantumElect. QE-19, 1134 (1983) http://dx.doi.org/10.1109/JQE.1983.1071966[Crossref]
• [6] J.-W. Shi, Y.-S. Wu, F.-C. Hong, W.-Y. Chiu, IEEE Electr. DeviceL. 29, 714 (2008) http://dx.doi.org/10.1109/LED.2008.2000668[Crossref]
• [7] H. Dejun, L. Guohui, Y.F. Zhang, E.-J. Zhu, IEEE Photonic. Tech. L. 9, 1391 (1997) http://dx.doi.org/10.1109/68.623273[Crossref]
• [8] B. Ściana et al., J. Cryst. Growth 310, 5227 (2008) http://dx.doi.org/10.1016/j.jcrysgro.2008.08.046[Crossref]
• [9] J. Kováč et al., Microelectr. J. 40, 562 (2009) http://dx.doi.org/10.1016/j.mejo.2008.06.090[Crossref]
• [10] S.M. Frimel, K.P. Roenkera, J. Appl. Phys. 82, 3581 (1997) http://dx.doi.org/10.1063/1.365677[Crossref]

Identifiers

DOI

10.2478/s11534-011-0023-6