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Journal
2011 | 9 | 4 | 1114-1121
Article title

Simulations of AlGaAs/GaAs heterojunction phototransistors

Content
Title variants
Languages of publication
EN
Abstracts
EN
Heterojunction bipolar phototransistors, based on GaAs technology, are widely used in optoelectronic integrated circuits. One of the methods to improve phototransistor performance is applying a delta-doped thin base, which causes both a higher current gain and a better time response. There is a lack of information about this kind of device in the literature. Our work presents the results of computer simulations of AlGaAs/GaAs n-p-n phototransistors, with a bulk-doped and delta-doped base working as two- and threeterminal devices. The characteristics and device parameters obtained clearly show that phototransistors with delta-doped base have higher sensitivity and a better time response compared to the structures with a bulk-doped base. Based on simulation results, we modified the epitaxial phototransistor structure with a double delta-doped base that should improve device performance.
Publisher

Journal
Year
Volume
9
Issue
4
Pages
1114-1121
Physical description
Dates
published
1 - 8 - 2011
online
30 - 4 - 2011
Contributors
author
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland, Beata.Sciana@pwr.wroc.pl
author
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-011-0023-6
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