TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors

• Authors: Adam Łaszcz , Jacek Ratajczak , Andrzej Czerwinski , Jerzy Kątcki , Nicolas Breil , Guilhem Larrieu , Emmanuel Dubois
• Languages of publication: EN

Abstracts

EN

Transmission electron microscopy methods were used to determine the impact of two different implantation processes on the morphology of platinum silicide layers constituting low Schottky barrier contacts intended as the source/drain in MOS transistors. These processes are very promising candidates for the reduction of the Schottky barrier height (SBH) of contacts and are realized by (i) implantation-through-metal (ITM) followed by dopant-segregation induced by silicidation annealing and (ii) implantation-through-silicide (ITS) followed by dopant-segregation due to the post-silicidation annealing. The studies showed that depending on the type and conditions of the process (ITM or ITS with various post-silicidation annealing temperatures) different morphologies of PtSi layers and PtSi/Si interfaces roughnesses are observed. Better quality silicide layers and silicide/silicon interfaces were found for samples after the ITS process with post-silicidation annealing at 500°C than for samples after the ITM process or the ITS process with post-silicidation annealing at temperatures not exceeding 400°C.The observed microstructure of grains and interfaces in these samples, along with the impact of the dopant-segregation, may significantly influence the SBH value. The diffraction patterns and EDXS measurements revealed that regardless of the process type, the formed silicide layer is always PtSi.

Keywords

EN

transmission electron microscopy (TEM); high-resolution transmission electron microscopy (HRTEM); low Schottky barrier height (SBH); PtSi/Si contacts

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 2
• Pages: 423-427

Dates

published

1 - 4 - 2011

online

20 - 2 - 2011

Contributors

author

Adam Łaszcz

• Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland

author

Jacek Ratajczak

• Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland

author

Andrzej Czerwinski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland

author

Jerzy Kątcki

• Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland

author

Nicolas Breil

• IEMN, UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d’Ascq Cedex, France

author

Guilhem Larrieu

• IEMN, UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d’Ascq Cedex, France

author

Emmanuel Dubois

• IEMN, UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d’Ascq Cedex, France

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Identifiers

DOI

10.2478/s11534-010-0135-4