Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results

Journal

2011 | 9 | 2 | 423-427

Article title

TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors

Content

Title variants

Languages of publication

EN

Abstracts

EN
Transmission electron microscopy methods were used to determine the impact of two different implantation processes on the morphology of platinum silicide layers constituting low Schottky barrier contacts intended as the source/drain in MOS transistors. These processes are very promising candidates for the reduction of the Schottky barrier height (SBH) of contacts and are realized by (i) implantation-through-metal (ITM) followed by dopant-segregation induced by silicidation annealing and (ii) implantation-through-silicide (ITS) followed by dopant-segregation due to the post-silicidation annealing. The studies showed that depending on the type and conditions of the process (ITM or ITS with various post-silicidation annealing temperatures) different morphologies of PtSi layers and PtSi/Si interfaces roughnesses are observed. Better quality silicide layers and silicide/silicon interfaces were found for samples after the ITS process with post-silicidation annealing at 500°C than for samples after the ITM process or the ITS process with post-silicidation annealing at temperatures not exceeding 400°C.The observed microstructure of grains and interfaces in these samples, along with the impact of the dopant-segregation, may significantly influence the SBH value. The diffraction patterns and EDXS measurements revealed that regardless of the process type, the formed silicide layer is always PtSi.

Publisher

Journal

Year

Volume

9

Issue

2

Pages

423-427

Physical description

Dates

published
1 - 4 - 2011
online
20 - 2 - 2011

Contributors

author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warsaw, Poland
author
  • IEMN, UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d’Ascq Cedex, France
  • IEMN, UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d’Ascq Cedex, France
  • IEMN, UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d’Ascq Cedex, France

References

  • [1] J.P. Snyder, C. R. Helms, Y. Nishi, Appl. Phys. Lett. 67, 1420 (1995) http://dx.doi.org/10.1063/1.114513[Crossref]
  • [2] C. Wang, J.P. Snyder, J.R. Tucker, Appl. Phys. Lett. 74, 1174 (1998) http://dx.doi.org/10.1063/1.123477[Crossref]
  • [3] E. Dubois, G. Larrieu, Solid State Electron. 46, 997 (2002) http://dx.doi.org/10.1016/S0038-1101(02)00033-3[Crossref]
  • [4] E. Dubois, G. Larrieu, J. Appl. Phys. 96, 729 (2004) http://dx.doi.org/10.1063/1.1756215[Crossref]
  • [5] E. Dubois, G. Larrieu, IEEEElectr. DeviceL. 25, 801 (2004)
  • [6] E. Dubois, G. Larrieu, IEEET. Electron Dev. 52, 2720 (2005) http://dx.doi.org/10.1109/TED.2005.859703[Crossref]
  • [7] D. Connelly, C. Faulkner, D.E. Grupp, IEEE T. Electron Dev. 50, 1340 (2003) http://dx.doi.org/10.1109/TED.2003.813229[Crossref]
  • [8] T. Kinoshita et al., Int. El. Devices Meet. 2006, 1 (2006) http://dx.doi.org/10.1109/IEDM.2006.346963[Crossref]
  • [9] A. Kinoshita, C. Tanaka, K. Uchida, J. Koga, In: Oyo Butsuri Gakkai(Ed.), Symposiumon VLSI Techology, 14–18 June 2005, Kyoto, Japan (Japan Society of Applied Physics, Tokyo, 2005) 158
  • [10] G. Larrieu et al., Mater. Sci. Eng. B-Adv. 154–155, 159 (2008) http://dx.doi.org/10.1016/j.mseb.2008.10.014[Crossref]
  • [11] A.A. Naem, J. Appl. Phys. 64, 4161 (1988) http://dx.doi.org/10.1063/1.341329[Crossref]
  • [12] 07-0251, Powder Diffraction File-International Centre for Diffraction Data (ICDD)
  • [13] A. Łaszcz et al., Nucl. Instrum. Meth. B253, 274 (2006)
  • [14] G. Larrieu et al., Int. El. Devices Meet. 2007, 147 (2007)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-010-0135-4
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.