Investigations of As-S-Se thin films for use as inorganic photoresist for digital image-matrix holography

• Authors: Andrejs Bulanovs , Vjacheslavs Gerbreders , George Kirilovs , Janis Teteris
• Languages of publication: EN

Abstracts

EN

As-S-Se chalcogenide thin films are successfully employed in classical and dot-matrix holography as inorganic photoresists for obtaining a relief-phase hologram. However using these films for image-matrix hologram recording has not been studied due to some features of image-matrix technology. For the applied research of the optical properties of As-S-Se films an experimental device of digital image-matrix holographic recording based on 100 mW 405 nm semi-conductor laser and Spatial Light Modulator (SLM) has been created. The device has the following main parameters: 140 × 105 µm frame size; laser intensity during exposure 10 W/cm2. With the help of this device diffraction grating and security holograms were recorded on As-S-Se thin films. The work reported herein presents results of an experimental study of how diffraction efficiency (DE) of the received relief-phase holographic gratings depends on an exposure and period. Diffraction grating profiles and speed of etching corresponding to different exposure doses are shown. Hologram samples with DE = 65% have been received which allows for using chalcogenide film as alternative to organic photoresists in applied dot-matrix and image-matrix holography.

Keywords

EN

inorganic photoresist; amorphous chalcogenide film; digital holography

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 5
• Pages: 1327-1333

Dates

published

1 - 10 - 2011

online

15 - 9 - 2011

Contributors

author

Andrejs Bulanovs

• Innovative Microscopy Center, Daugavpils University, Daugavpils, Latvia

author

Vjacheslavs Gerbreders

• Innovative Microscopy Center, Daugavpils University, Daugavpils, Latvia

author

George Kirilovs

• Innovative Microscopy Center, Daugavpils University, Daugavpils, Latvia

author

Janis Teteris

• Institute of Solid State Physics, University of Latvia, Riga, Latvia

References

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Identifiers

DOI

10.2478/s11534-010-0133-6