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Journal
2011 | 9 | 5 | 1327-1333
Article title

Investigations of As-S-Se thin films for use as inorganic photoresist for digital image-matrix holography

Content
Title variants
Languages of publication
EN
Abstracts
EN
As-S-Se chalcogenide thin films are successfully employed in classical and dot-matrix holography as inorganic photoresists for obtaining a relief-phase hologram. However using these films for image-matrix hologram recording has not been studied due to some features of image-matrix technology. For the applied research of the optical properties of As-S-Se films an experimental device of digital image-matrix holographic recording based on 100 mW 405 nm semi-conductor laser and Spatial Light Modulator (SLM) has been created. The device has the following main parameters: 140 × 105 µm frame size; laser intensity during exposure 10 W/cm2. With the help of this device diffraction grating and security holograms were recorded on As-S-Se thin films. The work reported herein presents results of an experimental study of how diffraction efficiency (DE) of the received relief-phase holographic gratings depends on an exposure and period. Diffraction grating profiles and speed of etching corresponding to different exposure doses are shown. Hologram samples with DE = 65% have been received which allows for using chalcogenide film as alternative to organic photoresists in applied dot-matrix and image-matrix holography.
Publisher

Journal
Year
Volume
9
Issue
5
Pages
1327-1333
Physical description
Dates
published
1 - 10 - 2011
online
15 - 9 - 2011
Contributors
  • Innovative Microscopy Center, Daugavpils University, Daugavpils, Latvia, bulanov@inbox.lv
  • Innovative Microscopy Center, Daugavpils University, Daugavpils, Latvia
  • Innovative Microscopy Center, Daugavpils University, Daugavpils, Latvia
author
  • Institute of Solid State Physics, University of Latvia, Riga, Latvia
References
  • [1] C.-K. Lee, J.W.-J. Wu, S.-L. Yeh, C.-W. Tu, Appl. Optics 39, 40 (2000) http://dx.doi.org/10.1364/AO.39.000040[Crossref]
  • [2] L. Yaotang, W. Tianji, Y. Shining, Z. Shichao, Proc. SPIE 3569, 121 (1998)
  • [3] A. Bulanov, V. Gerbreders, V. Paschkevich, Proc. SPIE 6596, 124 (2007)
  • [4] J. Orava, T. Wagner, M. Krbal, T. Kohoutek, J. Non-Cryst. Solids 353, 1441(2007) http://dx.doi.org/10.1016/j.jnoncrysol.2006.10.069[Crossref]
  • [5] A. Kovalskiy, M. Vlcek, H. Jain, J. Non-Cryst. Solids 352, 589 (2006) http://dx.doi.org/10.1016/j.jnoncrysol.2005.11.046[Crossref]
  • [6] J. Teteris, M. Reinfelde, J. Optoelectron. Adv. M. 5, 1355 (2003)
  • [7] A. Stronski, M. Vlecek, Opto-Electron. Rev. 8, 263 (2000)
  • [8] J. Teteris, J. Optoelectron. Adv. M. 4, 687 (2002)
  • [9] J. Teteris, J. Non-Cryst. Solids 299302, 978 (2002) http://dx.doi.org/10.1016/S0022-3093(01)01126-7[Crossref]
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0133-6
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