Creation of high resolution pattern by nanoscratching

• Authors: Maria Ramiączek-Krasowska , Joanna Prażmowska , Kornelia Los , Andrzej Stafiniak , Adam Szyszka , Regina Paszkiewicz , Wojciech Orski , Karol Tarnowski , Marek Tłaczała
• Languages of publication: EN

Abstracts

EN

The lithography is a basic microelectronic process which determines properties of fabricated device. The resolution of optical lithography applied nowadays is insufficient for creating high resolution patterns such as gate electrode in transistors. The scaling ability is the major motivation for undertaking experiments to elaborate high resolution lithography techniques. The atomic force microscope (AFM) is commonly used as tool for creation patterns in sub-micrometers resolution. In this paper, the results of simulations of electromagnetic field behavior during passing the gap with a size smaller than the wavelength of the optical lithography light source are presented. Also results of the nanoscratching lithography prepared for various parameters of force that are applied to the tip are summarized.

Keywords

EN

nanoscratching; AFM lithography

• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 2
• Pages: 404-409

Dates

published

1 - 4 - 2011

online

20 - 2 - 2011

Contributors

author

Maria Ramiączek-Krasowska

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland,

author

Joanna Prażmowska

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland

author

Kornelia Los

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland

author

Andrzej Stafiniak

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland

author

Adam Szyszka

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland

author

Regina Paszkiewicz

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland

author

Wojciech Orski

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, Poland

author

Karol Tarnowski

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, Poland

author

Marek Tłaczała

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland

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Identifiers

DOI

10.2478/s11534-010-0115-8