Modifying of etching anisotropy of silicon substrates by surface active agents

• Authors: Krzysztof Rola , Irena Zubel
• Languages of publication: EN

Abstracts

EN

The influence of alcohol additives on etch rate anisotropy of Si(hkl) planes has been studied. The etching processes were carried out in 3 and 5 M KOH aqueous solutions saturated and non-saturated with alcohols. Isopropanol, 1-propanol and tert-butanol were examined. It has been showed that the etching process cannot be controlled only by the surface tension of the solution. Saturation of the etching solution with alcohols modifies etch rate anisotropy, lowering the ratio of the etch rate of (110) and vicinal planes to the etch rate of (100) plane. The morphology of Si(hkl) planes etched in 3 M KOH solution saturated with tert-butyl alcohol has been studied in detail. Smooth (331) and (221) planes have been achieved in this solution. The (100) plane turned out to be densely covered by hillocks, opposite to the (100) plane etched in weak-alkaline solution saturated with isopropanol. To explain this phenomenon, the mechanism of hillocks formation on Si(100) surface has been proposed.

Keywords

EN

silicon; (hkl) planes; anisotropic etching; tert-butanol; hillocks

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 2
• Pages: 410-416

Dates

published

1 - 4 - 2011

online

20 - 2 - 2011

Contributors

author

Krzysztof Rola

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

author

Irena Zubel

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

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Identifiers

DOI

10.2478/s11534-010-0114-9