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Journal
2011 | 9 | 2 | 472-481
Article title

3D quantum mechanical simulation of square nanowire MOSFETs by using NEGF method

Content
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EN
Abstracts
EN
In order to investigate the specifications of nanoscale transistors, we have used a three dimensional (3D) quantum mechanical approach to simulate square cross section silicon nanowire (SNW) MOSFETs. A three dimensional simulation of silicon nanowire MOSFET based on self consistent solution of Poisson-Schrödinger equations is implemented. The quantum mechanical transport model of this work uses the non-equilibrium Green’s function (NEGF) formalism. First, we simulate a double-gate (DG) silicon nanowire MOSFET and compare the results with those obtained from nanoMOS simulation. We understand that when the transverse dimension of a DG nanowire is reduced to a few nanometers, quantum confinement in that direction becomes important and 3D Schrödinger equation must be solved. Second, we simulate gate-all-around (GAA) silicon nanowire MOSFETs with different shapes of gate. We have investigated GAA-SNW-MOSFET with an octagonal gate around the wire and found out it is more suitable than a conventional GAA MOSFET for its more I
on/I
off, less Drain-Induced-Barrier-Lowering (DIBL) and less subthreshold slope.
Publisher

Journal
Year
Volume
9
Issue
2
Pages
472-481
Physical description
Dates
published
1 - 4 - 2011
online
20 - 2 - 2011
Contributors
  • School of Electrical and Computer Engineering, Shiraz University, Shiraz, Iran, esi3120@gmail.com
author
  • School of Electrical and Computer Engineering, Shiraz University, Shiraz, Iran
  • School of Electrical and Computer Engineering, Shiraz University, Shiraz, Iran
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0097-6
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