PL EN


Preferences help
enabled [disable] Abstract
Number of results
Journal
2011 | 9 | 2 | 313-318
Article title

Optical and electrical properties of nanocrystalline TiO2:Pd semiconducting oxides

Content
Title variants
Languages of publication
EN
Abstracts
EN
Electrical and optical properties of TiO2:Pd thin films deposited from Ti-Pd mosaic targets sputtered in reactive oxygen plasma have been studied. The properties were investigated for thin films with the Pd amount of 5.5 at. %, 8.4 at. % and 23 at. %. Based on resistivity measurements a drop from 103 down to almost 10−3Ωcm has been recorded when the Pd amount was varied from 5.5 at. % to 23 at. %, respectively. Moreover, it was shown that doping with different amounts of Pd results in the possibility of obtaining both types of electrical conduction: n-type for the TiO2 with 5.5 at. % and 8.4 at. % of Pd and p-type for the TiO2 with 23 at. % of Pd thin films. From optical measurements it has been found that as the Pd amount was increased the transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength range of up to 600 nm. The optical band gap was calculated for direct and indirect transitions from optical absorption spectra. Structural properties were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD patterns displayed occurrence of the crystalline, TiO2-rutile for lower Pd amounts (5.5 at. %, 8.4 at. %), while the TiO2:Pd (23 at. %) thin films displayed XRD-amorphous behaviour. Images obtained from AFM displayed dense, nanocrystalline structure with homogenous distribution of crystallites. Additionally performed secondary ion mass spectroscopy investigation confirmed homogenous distribution of Pd in the whole thickness of the prepared thin films.
Keywords
Publisher
Journal
Year
Volume
9
Issue
2
Pages
313-318
Physical description
Dates
published
1 - 4 - 2011
online
20 - 2 - 2011
References
  • [1] H. Tanaka, T. Shimakawa, T. Miyata, H. Sato, T. Minami, Thin Solid Films 80, 469 (2004)
  • [2] K. Tonooka, H. Bando, Y. Aiura, Thin Solid Films 327, 445 (2003)
  • [3] T. Kamiya, H. Hiramatsu, K. Nomura, H. Hosono, J. Electroceram 17, 267 (2006) http://dx.doi.org/10.1007/s10832-006-6710-9[Crossref]
  • [4] H. Ohta, H. Hosono, Mater. Today 7, 42 (2004) http://dx.doi.org/10.1016/S1369-7021(04)00288-3[Crossref]
  • [5] H. Kawazoe, H. Yanagi, K. Ueda, H. Hosono, MRS Bull. 25, 28 (2000) http://dx.doi.org/10.1557/mrs2000.148[Crossref]
  • [6] A.N. Banerjee, K.K. Chattopadhyay, Prog. Cryst. Growth Ch. 50, 52 (2005) http://dx.doi.org/10.1016/j.pcrysgrow.2005.10.001[Crossref]
  • [7] C.G. Granqvist, Sol. Energ. Mater. Sol. C. 91, 1529 (2007) http://dx.doi.org/10.1016/j.solmat.2007.04.031[Crossref]
  • [8] M.A. Gillispie, M.F. van Hest, M.S. Dabney, J.D. Perkins, D.S. Ginley, J. Mater. Res. 22, 2832 (2007) http://dx.doi.org/10.1557/JMR.2007.0353[Crossref]
  • [9] Y. Furubayashi et al., Appl. Phys. Lett. 86, 252101 (2005) http://dx.doi.org/10.1063/1.1949728[Crossref]
  • [10] N. Yamada et al., Jpn. J. Appl. Phys. 46, 5275 (2007) http://dx.doi.org/10.1143/JJAP.46.5275[Crossref]
  • [11] U. Diebold, Surf. Sci. Rep. 48, 53 (2003) http://dx.doi.org/10.1016/S0167-5729(02)00100-0[Crossref]
  • [12] D.K. Schroder, Semiconductor material and device characterization (A Wiley-Interscience Publication, New York, 1998)
  • [13] A. Karuppasamy, A. Subrahmanyam, Thin Solid Films 516, 175 (2007) http://dx.doi.org/10.1016/j.tsf.2007.07.163[Crossref]
  • [14] C.G. Granqvist, Sol. Energ. Mater. Sol. C. 91, 1529 (2007) http://dx.doi.org/10.1016/j.solmat.2007.04.031[Crossref]
  • [15] E.L. Prociow et al., Thin Solid Films 515, 6344 (2007) http://dx.doi.org/10.1016/j.tsf.2006.11.082[Crossref]
  • [16] J. Domaradzki, K. Nitsch, E. Prociow, D. Kaczmarek, B. Paszkiewicz, Solid State Ionics 176, 2177 (2005) http://dx.doi.org/10.1016/j.ssi.2004.09.066[Crossref]
  • [17] J. Domaradzki, D. Kaczmarek, A. Borkowska, M. Wolcyrz, B. Paszkiewicz, Phys. Status Solidi A 203, 2215 (2006) http://dx.doi.org/10.1002/pssa.200566011[Crossref]
  • [18] E.L. Prociow, J. Domaradzki, D. Kaczmarek, T. Berlicki, Polish patent application P382163 (2007
  • [19] A.M. Ruiz, A. Cornet, K. Shimanoe, J.R. Morante, N. Yamazoe, Sensor. Actuat. B-Chem. 108, 34 (2005) http://dx.doi.org/10.1016/j.snb.2004.09.045[Crossref]
  • [20] D. Crisan et al., J. Phys. Chem. Solids 69, 2548 (2008) http://dx.doi.org/10.1016/j.jpcs.2008.05.014[Crossref]
  • [21] R. Wasielewski et al., Appl. Surf. Sci. 254, 4396 (2008) http://dx.doi.org/10.1016/j.apsusc.2008.01.017[Crossref]
  • [22] H.P. Klug, L.E. Alexander, In: H.P. Klug, L.E. Alexander (Eds.), X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, 2nd edition (John Wiley and Sons, New York, 1974) 635
  • [23] Powder Diffraction File. Joint Committee on Powder Diffraction Standards. Philadelphia, PA: ASTM, 1967 Card 21-1276
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0094-9
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.