Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O

• Authors: Harry Alles , Jaan Aarik , Aleks Aidla , Aurelien Fay , Jekaterina Kozlova , Ahti Niilisk , Martti Pärs , Mihkel Rähn , Maciej Wiesner , Pertti Hakonen , Väino Sammelselg
• Languages of publication: EN

Abstracts

EN

Atomic layer deposition of HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180°C. HfO2 was also deposited in a two-step temperature process where the initial growth of about 1 nm at 170°C was continued up to 10–30 nm at 300°C. This process yielded uniform, monoclinic HfO2 films with RMS roughness of 1.7 nm for 10–12 nm thick films and 2.5 nm for 30 nm thick films. Raman spectroscopy studies revealed that the deposition process caused compressive biaxial strain in graphene, whereas no extra defects were generated. An 11 nm thick HfO2 film deposited onto bilayer graphene reduced the electron mobility by less than 10% at the Dirac point and by 30–40% far away from it.

Keywords

EN

graphene; atomic layer depostion; high-k dielectric thin films; nanoelectronics

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 2
• Pages: 319-324

Dates

published

1 - 4 - 2011

online

20 - 2 - 2011

Contributors

author

Harry Alles

author

Jaan Aarik

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

author

Aleks Aidla

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

author

Aurelien Fay

• Low Temperature Laboratory, Aalto University, Espoo, P.O. Box 15100, Finland

author

Jekaterina Kozlova

author

Ahti Niilisk

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

author

Martti Pärs

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

author

Mihkel Rähn

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

author

Maciej Wiesner

author

Pertti Hakonen

• Low Temperature Laboratory, Aalto University, Espoo, P.O. Box 15100, Finland

author

Väino Sammelselg

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Identifiers

DOI

10.2478/s11534-010-0040-x