Defect entropies and enthalpies in BaF2

• Authors: Vassiliki Katsika-Tsigourakou , Efthimios Skordas
• Languages of publication: EN

Abstracts

EN

Various experimental techniques have revealed that the predominant intrinsic point defects in BaF2 are anion Frenkel defects. Their formation, enthalpy and entropy, as well as the corresponding parameters for the fluorine vacancy and fluorine interstitial motion have been determined. In addition, low temperature dielectric relaxation measurements in BaF2doped with uranium leads to the parameters τ0, E in the Arrhenius relation τ = τ0 exp(E/k
B
T) for the relaxation time τ. For the relaxation peak associated with a single tetravalent uranium, the migration entropy deduced from the pre-exponential factor τ0 is smaller than the anion Frenkel defect formation entropy by almost two orders of magnitude. We show that, despite their great variation, the defect entropies and enthalpies are interconnected through a model based on anharmonic properties of the bulk material which have been recently studied by employing density-functional theory and density-functional perturbation theory.

Keywords

EN

defects; dielectric properties

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2010
• Volume: 8
• Issue: 6
• Pages: 900-904

Dates

published

1 - 12 - 2010

online

5 - 9 - 2010

Contributors

author

Vassiliki Katsika-Tsigourakou

• Department of Solid State Physics, Faculty of Physics, University of Athens, Panepistimiopolis, 157 84, Zografos, Greece

author

Efthimios Skordas

• Department of Solid State Physics, Faculty of Physics, University of Athens, Panepistimiopolis, 157 84, Zografos, Greece

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Identifiers

DOI

10.2478/s11534-010-0020-1