Theoretical modelling of surface phonons

• Authors: Gyaneshwar Srivastava , Huseyin Tütüncü
• Languages of publication: EN

Abstracts

EN

We present a mini review of progress made towards theoretical modelling of surface phonons. We outline the essential ingredients of two theoretical methods, viz. an adiabatic bond charge method for semiconductor surfaces and the ab-initio density-functional perturbation method for solid surfaces in general. From the results of theoretical calculations we establish trends and criteria for the existence of localized phonon modes on group-IV(001) and III-V(110) semiconductor surfaces. We further obtain signatures of characteristic vibrational modes which develop during dissociative molecular adsorption on Si(001) surfaces. The results are compared with available experimental measurements. Some remarks are forwarded regarding manipulation of surface phonon modes for scientific advances and technological applications.

Keywords

EN

surfaces; phonons; Si(001); III-V(110)

Discipline

• 63.10.+a: General theory
• 63.22.-m: Phonons or vibrational states in low-dimensional structures and nanoscale materials

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2009
• Volume: 7
• Issue: 2
• Pages: 209-219

Dates

published

1 - 6 - 2009

online

26 - 4 - 2009

Contributors

author

Gyaneshwar Srivastava

• School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK

author

Huseyin Tütüncü

• Fen-Edebiyat Fakültesi, Fizik Bölümü, Sakarya Ãœniversitesi, 54140, Adapazarı, Turkey

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Identifiers

DOI

10.2478/s11534-009-0032-x