Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

• Authors: Peter Bury , Hikaru Kobayashi , Masao Takahashi , Kentaro Imamura , Peter Sidor , FrantiÅ¡ek ÄŒernobila
• Languages of publication: EN

Abstracts

EN

Ultrathin silicon dioxide (SiO2) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO2/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO3), and SiO2 thickness [3–9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance — voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.

Keywords

EN

MOS structures; semiconductor-insulator interfaces; silicon dioxide; interface states; acoustic DLTS

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2009
• Volume: 7
• Issue: 2
• Pages: 237-241

Dates

published

1 - 6 - 2009

online

26 - 4 - 2009

Contributors

author

Peter Bury

• Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia

author

Hikaru Kobayashi

• Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

author

Masao Takahashi

• Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

author

Kentaro Imamura

• Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

author

Peter Sidor

• Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia

author

František Černobila

• Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia

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Identifiers

DOI

10.2478/s11534-009-0029-5