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Journal
2009 | 7 | 2 | 237-241
Article title

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

Content
Title variants
Languages of publication
EN
Abstracts
EN
Ultrathin silicon dioxide (SiO2) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO2/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO3), and SiO2 thickness [3–9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance — voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.
Publisher

Journal
Year
Volume
7
Issue
2
Pages
237-241
Physical description
Dates
published
1 - 6 - 2009
online
26 - 4 - 2009
Contributors
author
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia, bury@fel.uniza.sk
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
author
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0029-5
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