Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions

• Authors: Masao Takahashi , Takeru Shishido , Hitoo Iwasa , Hikaru Kobayashi
• Languages of publication: EN

Abstracts

EN

The local photovoltage of the pn-junction single-crystalline silicon solar cells observed by spot light scanning gradually decreases in the vicinity of edges. The energy conversion efficiency is increased by shadowing the edge regions where the local photovoltage is lower, showing that the defect density is high in the edge regions. From the analysis of the local photovoltage, the spacial distribution of defect states is obtained. The cyanide method, i. e., immersion of solar cells in HCN solutions at room temperature, increases the local photovoltage and increases the energy conversion efficiency.

Keywords

EN

defect passivation; cyanide method; silicon solar cell; local photovoltage; energy conversion efficiency

Discipline

• 68.35.bg: Semiconductors
• 72.40.+w: Photoconduction and photovoltaic effects
• 81.65.Rv: Passivation(see also 82.45.Bb Corrosion and passivation in electrochemistry)

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2009
• Volume: 7
• Issue: 2
• Pages: 227-231

Dates

published

1 - 6 - 2009

online

26 - 4 - 2009

Contributors

author

Masao Takahashi

• ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

author

Takeru Shishido

• ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

author

Hitoo Iwasa

• ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

author

Hikaru Kobayashi

• ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

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Identifiers

DOI

10.2478/s11534-009-0025-9