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Journal
2009 | 7 | 2 | 227-231
Article title

Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions

Content
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Languages of publication
EN
Abstracts
EN
The local photovoltage of the pn-junction single-crystalline silicon solar cells observed by spot light scanning gradually decreases in the vicinity of edges. The energy conversion efficiency is increased by shadowing the edge regions where the local photovoltage is lower, showing that the defect density is high in the edge regions. From the analysis of the local photovoltage, the spacial distribution of defect states is obtained. The cyanide method, i. e., immersion of solar cells in HCN solutions at room temperature, increases the local photovoltage and increases the energy conversion efficiency.
Publisher

Journal
Year
Volume
7
Issue
2
Pages
227-231
Physical description
Dates
published
1 - 6 - 2009
online
26 - 4 - 2009
Contributors
  • ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
author
  • ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0025-9
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