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2009 | 7 | 2 | 315-320
Article title

Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

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EN
Abstracts
EN
We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (µc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E
04 (energy at which the absorption coefficient is equal to 104 cm−1), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.
Contributors
  • Department of Engineering Fundamentals, Faculty of Electrical Engineering, University of Žilina, ul. kpt. J. Nálepku 1390, 031 01, Liptovský Mikuláš, Slovakia, mullerova@lm.uniza.sk
  • Department of Materials and Technology, New Technology Research Center, University of West Bohemia, Univerzitní 8, 306 14, Plzeň, Czech Republic
  • Department of Materials and Technology, New Technology Research Center, University of West Bohemia, Univerzitní 8, 306 14, Plzeň, Czech Republic
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0023-y
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