On the topographic and optical properties of SiC/SiO2 surfaces

• Authors: Stanislav Jureckova , Maria Jureckova , Ferdinand Chovanec , Hikaru Kobayashi , Masao Takahashi , Milan Mikula , Emil Pina
• Languages of publication: EN

Abstracts

EN

The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO2 structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.

Keywords

EN

SiC; interface roughness; multifractal systems; AFM, STM; optical properties

Discipline

• 07.79.Cz: Scanning tunneling microscopes
• 07.79.Lh: Atomic force microscopes
• 61.72.Cc: Kinetics of defect formation and annealing
• 61.82.Fk: Semiconductors
• 68.55.ag: Semiconductors

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2009
• Volume: 7
• Issue: 2
• Pages: 321-326

Dates

published

1 - 6 - 2009

online

26 - 4 - 2009

Contributors

author

Stanislav Jureckova

• DEF FEI Žilina University, Nálepku 1390, 03101, Liptovský Mikuláá, Slovakia

author

Maria Jureckova

• Mathematical Institute SAS, Å tefánikova 49, 814 73, Bratislava, Slovakia

author

Ferdinand Chovanec

• Academy of Armed Forces of Gen. M. R. Å tefánik, Demänová 393, 031 01, Liptovský Mikuláš, Slovakia

author

Hikaru Kobayashi

• FCFT, Slovak University of Technology, Radlinského 9, 812 37, Bratislava, Slovakia

author

Masao Takahashi

• DFCM ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 587-0047, Japan

author

Milan Mikula

• FCFT, Slovak University of Technology, Radlinského 9, 812 37, Bratislava, Slovakia

author

Emil Pina

• Institute of Physics SAS, Dúbravská cesta 9, 84511, Bratislava, Slovakia

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Identifiers

DOI

10.2478/s11534-009-0021-0