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Journal
2009 | 7 | 2 | 321-326
Article title

On the topographic and optical properties of SiC/SiO2 surfaces

Content
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EN
Abstracts
EN
The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO2 structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.
Publisher

Journal
Year
Volume
7
Issue
2
Pages
321-326
Physical description
Dates
published
1 - 6 - 2009
online
26 - 4 - 2009
Contributors
  • DEF FEI Žilina University, Nálepku 1390, 03101, Liptovský Mikuláá, Slovakia, jurecka@lm.uniza.sk
  • Mathematical Institute SAS, Å tefánikova 49, 814 73, Bratislava, Slovakia
  • Academy of Armed Forces of Gen. M. R. Å tefánik, Demänová 393, 031 01, Liptovský Mikuláš, Slovakia
  • FCFT, Slovak University of Technology, Radlinského 9, 812 37, Bratislava, Slovakia
  • DFCM ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 587-0047, Japan
author
  • FCFT, Slovak University of Technology, Radlinského 9, 812 37, Bratislava, Slovakia
author
  • Institute of Physics SAS, Dúbravská cesta 9, 84511, Bratislava, Slovakia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0021-0
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