Combustion synthesis and luminescent properties of a blue-green emitting phosphor: (Ba1.95, Eu0.05)ZnSi2O7:B3+

• Authors: Shan-shan Yao , Yuan-yuan Li , Li-hong Xue , Yan You , You-wei Yan
• Languages of publication: EN

Abstracts

EN

A blue-green emitting phosphor (Ba1.95, Eu0.05)ZnSi2O7: Bx3+ was prepared by combustion synthesis and an efficient blue-green emission under near-ultraviolet was observed. The luminescence, crystallinity and particle sizes were investigated by using luminescence spectrometry, X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The emission spectrum shows a single band centered at 503 nm, which corresponds to the 4f
65d
1 →4f
7 transition of Eu2+. The excitation spectrum is a broad band extending from 260 to 465 nm, which matches the emission of ultraviolet light-emitting diodes. The optical absorption spectra of the (Ba1.95, Eu0.05)ZnSi2O7: B0.063+ exhibited band-gap energies of 3.9 eV. The results showed that boric acid was effective in improving the luminescence intensity of (Ba1.95, Eu0.05)ZnSi2O7, and the optimum molar ratio of boric acid to zinc nitrate was about 0.06. The phosphor (Ba1.95, Eu0.05)ZnSi2O7: B0.063+ synthesized by combustion method showed 1.5 times improved emission intensity compared with that of the Ba1.95ZnSi2O7: Eu0.052+ phosphor under λex = 353 nm.

Keywords

EN

combustion synthesis; luminescent properties; white light-emitting diodes

Discipline

• 42.70.-a: Optical materials(see also 81.05.-t Specific materials: fabrication, treatment, testing and analysis)
• 42.72.Bj: Visible and ultraviolet sources
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 81.20.-n: Methods of materials synthesis and materials processing(see also 61.72.U- Doping and impurity implantation; for crystal growth, see 81.10.-h; for film growth, deposition and epitaxy, see 81.15.-z)

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2009
• Volume: 7
• Issue: 4
• Pages: 800-805

Dates

published

1 - 12 - 2009

online

21 - 7 - 2009

Contributors

author

Shan-shan Yao

• State Key Laboratory of Materials Processing and Die & Mould Technology, College of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan, 43007, PR China

author

Yuan-yuan Li

• State Key Laboratory of Materials Processing and Die & Mould Technology, College of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan, 43007, PR China

author

Li-hong Xue

• State Key Laboratory of Materials Processing and Die & Mould Technology, College of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan, 43007, PR China

author

Yan You

• State Key Laboratory of Materials Processing and Die & Mould Technology, College of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan, 43007, PR China

author

You-wei Yan

• State Key Laboratory of Materials Processing and Die & Mould Technology, College of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan, 43007, PR China

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Identifiers

DOI

10.2478/s11534-009-0019-7