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Journal
2009 | 7 | 2 | 291-294
Article title

STM investigation of cobalt silicide nanostructures’ growth on Si(111)-(√19 Ã- √19) substrate

Content
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Languages of publication
EN
Abstracts
EN
Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicides’ nanostructures created on Si(111)-(√19 Ã- √19) substrates via Co evaporation and post deposition annealing. This (√19 Ã- √19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicides’ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7Ã-7) reconstruction occurred at the cost of Si(111)-(√19 Ã- √19).
Keywords
EN
Publisher
Journal
Year
Volume
7
Issue
2
Pages
291-294
Physical description
Dates
published
1 - 6 - 2009
online
26 - 4 - 2009
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-008-0141-y
Identifiers
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