Effect of adsorbed Sn on Ge diffusivity on Si(111) surface

• Authors: Andrey Dolbak , Boris Olshanetsky
• Languages of publication: EN

Abstracts

EN

The effect of adsorbed Sn as a surfactant on Ge diffusion on a Si(111) surface has been studied by Low Energy Electron Diffraction and Auger Electron Spectroscopy. The experimental dependence of Ge diffusion coefficients on the Si(111) surface versus temperature in the presence of adsorbed Sn atoms has been measured in the range from 300 to 650°C. It has been shown that at a Sn coverage of about 1 monolayer the mobility of Ge atoms increases by several orders of magnitude.

Keywords

EN

surface; silicon; germanium; tin; surface structure; surface diffusion; surfactant; low energy electron diffraction; Auger electron spectroscopy

Discipline

• 68.35.bg: Semiconductors
• 68.35.Fx: Diffusion; interface formation(see also 66.30.-h Diffusion in solids, for diffusion of adsorbates, see 68.43.Jk)
• 68.43.Jk: Diffusion of adsorbates, kinetics of coarsening and aggregation

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2008
• Volume: 6
• Issue: 3
• Pages: 634-637

Dates

published

1 - 9 - 2008

online

17 - 7 - 2008

Contributors

author

Andrey Dolbak

• Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation

author

Boris Olshanetsky

• Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation

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Identifiers

DOI

10.2478/s11534-008-0098-x