Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y
AlyAs barrier structures containing quantum wells

• Authors: Safi Altunöz , Hüseyin Çelik , Mehmet Cankurtaran
• Languages of publication: EN

Abstracts

EN

The mobility of electrons in vertical transport in GaAs/Ga1−y
AlyAs barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga1−y
AlyAs (0 ≤ y ≤ 0:26) linearly graded barriers between the n+-GaAs contacts and the Ga0:74Al0:26As central barrier, which contain N
w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N
w=0 and 2, whereas ionized impurity scattering is dominant in the samples with N
w=4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N
w=4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.

Keywords

EN

barrier structures; vertical transport; geometric magnetoresistance; mobility; hot electrons; scattering mechanisms; drift velocity

Discipline

• 72.20.Fr: Low-field transport and mobility; piezoresistance
• 72.20.Dp: General theory, scattering mechanisms
• 73.43.Qt: Magnetoresistance(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport in magnetic properties and materials)
• 73.40.Ty: Semiconductor-insulator-semiconductor structures

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2008
• Volume: 6
• Issue: 3
• Pages: 479-490

Dates

published

1 - 9 - 2008

online

17 - 7 - 2008

Contributors

author

Safi Altunöz

• Faculty of Engineering, Department of Physics, Beytepe, Hacettepe University, 06800, Ankara, Turkey

author

Hüseyin Çelik

• Faculty of Engineering, Department of Physics, Beytepe, Hacettepe University, 06800, Ankara, Turkey

author

Mehmet Cankurtaran

• Faculty of Engineering, Department of Physics, Beytepe, Hacettepe University, 06800, Ankara, Turkey

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Identifiers

DOI

10.2478/s11534-008-0067-4