Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

• Authors: Hua Li , Jianping Sang , Chang Liu , Hongbing Lu , Juncheng Cao
• Languages of publication: EN

Abstracts

EN

Single crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga2O3 is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga2O3 and the main epitaxial relationship should be $$
(0001)_{ZnO} \parallel (001)_{Ga_2 O_3 } \parallel (0001)_{GaN}
$$ and $$
[2 - 1 - 10]_{ZnO} \parallel [010]_{Ga_2 O_3 } \parallel [2 - 1 - 10]_{GaN}
$$.

Keywords

EN

zinc oxide; molecular beam epitaxy; transmission electron microscopy

Discipline

• 61.72.uj: III-V and II-VI semiconductors
• 75.50.Pp: Magnetic semiconductors
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2008
• Volume: 6
• Issue: 3
• Pages: 638-642

Dates

published

1 - 9 - 2008

online

17 - 7 - 2008

Contributors

author

Hua Li

author

Jianping Sang

• Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan, 430072, China

author

Chang Liu

• Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan, 430072, China

author

Hongbing Lu

• Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan, 430072, China

author

Juncheng Cao

• State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China

References

• [1] Z.W. Pang, Z.R. Dai, Z.L. Wang, Science 291, 1947 (2001) http://dx.doi.org/10.1126/science.1058120[Crossref]
• [2] H. Rensmo et al., J. Phys. Chem. B 101, 2598 (1997) http://dx.doi.org/10.1021/jp962918b[Crossref]
• [3] H.J. Muhret et al., Adv. Mater. 12, 231 (2000) http://dx.doi.org/10.1002/(SICI)1521-4095(200002)12:3<231::AID-ADMA231>3.0.CO;2-D[Crossref]
• [4] M.H. Huang et al., Science 292, 1897 (2001) http://dx.doi.org/10.1126/science.1060367[Crossref]
• [5] C.H. Liu et al., Appl. Phys. Lett. 83, 3168 (2003) http://dx.doi.org/10.1063/1.1609232[Crossref]
• [6] W. Göpel, J.W. Gardner, J. Hesse, Sensors Applications (Wiely-VCH, Weinheim, 2005)
• [7] D.M. Bagnall et al., Appl. Phys. Lett. 70, 2230 (1997) http://dx.doi.org/10.1063/1.118824[Crossref]
• [8] D.C. Look, D.C. Reynolds, J.W. Hemsky, R.L. Jones, J.R. Sizelove, Appl. Phys. Lett. 75, 811 (1999) http://dx.doi.org/10.1063/1.124521[Crossref]
• [9] H. Saeki, H. Tabata, T. Kawai, Solid State Commun. 120, 439 (2001) http://dx.doi.org/10.1016/S0038-1098(01)00400-8[Crossref]
• [10] K. Nakahara et al., J. Crystal Growth 227–228, 923 (2001) http://dx.doi.org/10.1016/S0022-0248(01)00929-0[Crossref]
• [11] A. El-Shaer, A. CHe Mofor, A. Bakin, M. Kreye, A. Waag, Superlattices Microstruct. 38, 265 (2005) http://dx.doi.org/10.1016/j.spmi.2005.08.025[Crossref]
• [12] J. Dai et al., J. Crystal Growth 290, 426 (2006) http://dx.doi.org/10.1016/j.jcrysgro.2006.01.009[Crossref]
• [13] T. Gruber, C. Kirchner, K. Thonke, R. Sauer, A. Waag, Phys. Status Solidi A 192, 166 (2002) http://dx.doi.org/10.1002/1521-396X(200207)192:1<166::AID-PSSA166>3.0.CO;2-G[Crossref]
• [14] B.P. Zhang, K. Wakatsuki, N.T. Binh, N. Usami, Y. Segawa, Thin Solid Films 449, 12 (2004) http://dx.doi.org/10.1016/S0040-6090(03)01466-4[Crossref]
• [15] H.L. Porter, A.L. Cai, J.F. Muth, J. Narayan, Appl. Phys. Lett. 86, 211918 (2005) http://dx.doi.org/10.1063/1.1923194[Crossref]
• [16] F.K. Shan et al., Appl. Phys. Lett. 86, 221910 (2005) http://dx.doi.org/10.1063/1.1939078[Crossref]
• [17] S.F. Chichibu, T. Yoshida, T. Onuma, H. Nakanishi, J. Appl. Phys. 91, 874 (2002) http://dx.doi.org/10.1063/1.1426238[Crossref]
• [18] D.K. Hwang et al., Appl. Phys. Lett. 86, 151917 (2005) http://dx.doi.org/10.1063/1.1895480[Crossref]
• [19] B.M. Ataev, W.V. Lundin, V.V. Mamedov, A.M. Bagamadova, E.E. Zavarin, J. Phys.-Condens. Matter 13, L211 (2001) http://dx.doi.org/10.1088/0953-8984/13/9/103[Crossref]
• [20] T. Makino et al., Appl. Phys. Lett. 79, 1282 (2001) http://dx.doi.org/10.1063/1.1398328[Crossref]
• [21] S.J. An et al., Appl. Phys. Lett. 84, 3612 (2004) http://dx.doi.org/10.1063/1.1738180[Crossref]
• [22] Y.I. Alivov, J.E. Van Nostrand, D.C. Look, M.V. Chukichev, B.M. Ataev, Appl. Phys. Lett. 83, 2943 (2003) http://dx.doi.org/10.1063/1.1615308[Crossref]
• [23] H. Li et al., Appl. Surf. Sci. 253, 8524 (2007) http://dx.doi.org/10.1016/j.apsusc.2007.04.028[Crossref]
• [24] S. Lee, D.Y. Kim, Mat. Sci. Eng. B-Solid 137, 80 (2007) http://dx.doi.org/10.1016/j.mseb.2006.10.014[Crossref]
• [25] S.K. Hong et al., Phys. Rev. B 65, 115331 (2002) http://dx.doi.org/10.1103/PhysRevB.65.115331[Crossref]

Identifiers

DOI

10.2478/s11534-008-0032-2