Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

• Authors: Arghya Banerjee , Kalyan Chattopadhyay
• Languages of publication: EN

Abstracts

EN

We report on the fabrication of all transparent heterojunction thin film diodes of the form glass/n-ZnO: Al/p-CuAlO2 produced by a combinatorial chemical and physical technique and on a study of their electro-optical properties. The n-ZnO: Al layer was deposited by a sol-gel-dip-coating process whereas the p-CuAlO2 layer was deposited by direct current sputtering techniques. The diode structure, with a total thickness of 1100 nm showed around 60% transmittance in the visible region. The current-voltage characteristics of the device showed a rectifying nature, with a low turn-on voltage around 0.8 V, having a rectification ratio > 50 at ± 2 V. The low turn-on voltage and moderate visible transmittance of the transparent diode indicate its potential application in the field of “Transparent” or “Invisible Electronics”.

Keywords

EN

Transparent heterojunction; p-CuAlO2 ; sol-gel-dip-coating; sputtering; invisible electronics

Discipline

• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 68.35.Dv: Composition, segregation; defects and impurities
• 78.66.Li: Other semiconductors

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2008
• Volume: 6
• Issue: 1
• Pages: 57-63

Dates

published

1 - 3 - 2008

online

26 - 3 - 2008

Contributors

author

Arghya Banerjee

author

Kalyan Chattopadhyay

• Thin Film and Nano-Science Laboratory, Department of Physics, Jadavpur University, Kolkata, 700 032, India

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Identifiers

DOI

10.2478/s11534-008-0005-5