Concentration of radiation displacement defects in BSO and BGO crystals irradiated by electrons or neutrons

• Authors: Piotr Potera
• Languages of publication: EN

Abstracts

EN

This work is devoted to the calculation of the concentration of radiation displacement defects (RDD) in bismuth germanate and bismuth silicate crystals as a function of particle energy (electrons and neutrons). Energy dependencies of RDD concentrations are discussed in comparison with results for other complex oxide crystals. The obtained results show that for the case of electron irradiation the radiation hardness of BSO and BGO should be similar to other oxide crystals, but for neutrons is drastically smaller. Additionally, for the neutron irradiation, the efficiency of the production of defects in the oxide sublattice is drastically smaller than for other oxide crystals.

Keywords

EN

BSO; BGO; oxide crystals; radiation displacement defect; electron irradiation; neutron irradiation

Discipline

• 05.10.Ln: Monte Carlo methods(see also 02.70.Tt, Uu in mathematical methods in physics; for Monte Carlo methods extensively used in subdivisions of physics, see the appropriate section; for example, see 52.65.Pp in plasma simulation)
• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2008
• Volume: 6
• Issue: 1
• Pages: 52-56

Dates

published

1 - 3 - 2008

online

26 - 3 - 2008

Contributors

author

Piotr Potera

• Institute of Physics, Rzeszow University, Rejtana 16 a, 35-959, Rzeszów, Poland

References

• [1] S.B. Ubizskii, et al., Phys. Stat. Sol. (a) 177, 349 (2000) http://dx.doi.org/10.1002/(SICI)1521-396X(200002)177:2<349::AID-PSSA349>3.0.CO;2-B[Crossref]
• [2] T. Yano, K. Ichikawa, M. Akiyoshi, Y. Tachi, J. Nucl. Mater. 283–287, 947 (2000) http://dx.doi.org/10.1016/S0022-3115(00)00092-1[Crossref]
• [3] P. Kurczynski, et al., Nucl. Instrum. Meth. A 431, 141 (1999) http://dx.doi.org/10.1016/S0168-9002(99)00283-1[Crossref]
• [4] F. Albernhe, et al., Nucl. Instrum. Meth. A 492, 91 (2002) http://dx.doi.org/10.1016/S0168-9002(02)01289-5[Crossref]
• [5] R. Zhu, H. Stone, H. Newman, T. Zhou, H. Tan, C. He, Nucl. Instrum. Meth. A 302, 69 (1991) http://dx.doi.org/10.1016/0168-9002(91)90493-A[Crossref]
• [6] K. Harada, M. Ishii, N. Senguttuvan, M. Kobayashi, M. Nikl, X. Feng, Jpn. J. Appl. Phys. 40, 1360 (2001) http://dx.doi.org/10.1143/JJAP.40.1360[Crossref]
• [7] X. Li, X. Fang, Shanghai Daxue Xuebao, Zitan Kexueban 8, 535 (2002)
• [8] E. Friedland, Critical Reviews in Solid State and Material Sciences 25, 87 (2001) http://dx.doi.org/10.1080/20014091104170[Crossref]
• [9] G.H. Kinchin, R.S. Pease, Rep. Progr. Phys. 18, 1 (1955) http://dx.doi.org/10.1088/0034-4885/18/1/301[Crossref]
• [10] P. Potera, Comp. Meth. Sci. Technol. 13, 47 (2007)
• [11] W.A. McKinley, H. Feshbach, Phys. Rev. 74, 1759 (1948) http://dx.doi.org/10.1103/PhysRev.74.1759[Crossref]
• [12] S.B. Ubizskii, The bulletin of State University “Lvivska Polytechnica” 357, 88 (1998)
• [13] S. Utsunomiya, S. Yudintsev, L.M. Wang, R.C. Ewing, J. Nucl. Mater. 322, 180 (2003) http://dx.doi.org/10.1016/S0022-3115(03)00327-1[Crossref]
• [14] W.J. Weber, F. Gao, R. Devanathan, W. Jiang, Nucl. Instrum. Meth. B 218, 68 (2004) http://dx.doi.org/10.1016/j.nimb.2003.12.006[Crossref]
• [15] S. Utsunomiy, L.M. Wang, R.C. Ewing, Nucl. Instrum. Meth. B 191, 600 (2002) http://dx.doi.org/10.1016/S0168-583X(02)00618-3[Crossref]
• [16] G.C. Messenger, M.S. Ash, The Effects of Radiation on Electronic Systems, 2nd edition (Van Nostrand Reinhold, New York, 1992)
• [17] E.R. Hodgson, L. Arizmendi, F. Agullo-Lopez, Nucl. Instrum. Meth. B 65, 275 (1992) http://dx.doi.org/10.1016/0168-583X(92)95048-V[Crossref]
• [18] E.R. Hodgson, F. Agullo-Lopez, Solid State Commun. 64, 965 (1987) http://dx.doi.org/10.1016/0038-1098(87)90572-2[Crossref]
• [19] A. Matkovskii, D. Sugak, S. Melnyk, P. Potera, A. Suchocki, Z. Frukacz, J. Alloys Comp. 300–301, 395 (2000) http://dx.doi.org/10.1016/S0925-8388(99)00771-9[Crossref]
• [20] V. Vasyltiv, et al., Phys. Stat. Sol. (a) 140, 353 (1993) http://dx.doi.org/10.1002/pssa.2211400206[Crossref]
• [21] E. Hodgson, C. Zaldo, F. Agullo-Lopez, Solid State Commun. 75, 351 (1990) http://dx.doi.org/10.1016/0038-1098(90)90910-4[Crossref]
• [22] J. Crawford, Nucl. Instrum. Meth. B 1, 159 (1984) http://dx.doi.org/10.1016/0168-583X(84)90063-6[Crossref]

Identifiers

DOI

10.2478/s11534-008-0002-8