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2007 | 5 | 3 | 385-397

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Growth and characterization of pulsed laser deposited ZnO thin films


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One of the most important and promising materials from metal oxides is ZnO with specific properties for near UV emission and absorption optical devices. The properties of ZnO thin films strongly depend on the deposition method. Among them, pulsed laser deposition (PLD) plays an important role for preparing various kinds of ZnO films, e.g. doped, undoped, monocrystalline, and polycrystalline. Different approaches - ablation of sintered ZnO pellets or pure metallic Zn as target material are described. This contribution is comparing properties of ZnO thin films deposited from pure Zn target in oxygen atmosphere and those deposited from sintered ZnO target. There is a close connection between final thin film properties and PLD conditions. The surface properties of differently grown ZnO thin films are measured by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Furthermore, different approaches - ablation of sintered ZnO pellet or pure metallic Zn as target materials are described. The main results characterize typical properties of ZnO films versus technological parameters are presented.










Physical description


1 - 9 - 2007
8 - 6 - 2007


  • International Laser Center, Ilkovicova 3, 812 19, Bratislava, Slovak Republic
  • International Laser Center, Ilkovicova 3, 812 19, Bratislava, Slovak Republic
  • International Laser Center, Ilkovicova 3, 812 19, Bratislava, Slovak Republic
  • Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19, Bratislava, Slovak Republic


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