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2007 | 5 | 3 | 385-397
Article title

Growth and characterization of pulsed laser deposited ZnO thin films

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EN
Abstracts
EN
One of the most important and promising materials from metal oxides is ZnO with specific properties for near UV emission and absorption optical devices. The properties of ZnO thin films strongly depend on the deposition method. Among them, pulsed laser deposition (PLD) plays an important role for preparing various kinds of ZnO films, e.g. doped, undoped, monocrystalline, and polycrystalline. Different approaches - ablation of sintered ZnO pellets or pure metallic Zn as target material are described. This contribution is comparing properties of ZnO thin films deposited from pure Zn target in oxygen atmosphere and those deposited from sintered ZnO target. There is a close connection between final thin film properties and PLD conditions. The surface properties of differently grown ZnO thin films are measured by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Furthermore, different approaches - ablation of sintered ZnO pellet or pure metallic Zn as target materials are described. The main results characterize typical properties of ZnO films versus technological parameters are presented.
Publisher

Journal
Year
Volume
5
Issue
3
Pages
385-397
Physical description
Dates
published
1 - 9 - 2007
online
8 - 6 - 2007
Contributors
author
  • International Laser Center, Ilkovicova 3, 812 19, Bratislava, Slovak Republic, vincze@ilc.sk
  • International Laser Center, Ilkovicova 3, 812 19, Bratislava, Slovak Republic
  • International Laser Center, Ilkovicova 3, 812 19, Bratislava, Slovak Republic
author
  • Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19, Bratislava, Slovak Republic
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-007-0027-4
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