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Number of results

Journal

2006 | 4 | 3 | 310-317

Article title

Ge diffusion on Si surfaces

Content

Title variants

Languages of publication

EN

Abstracts

EN
Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.

Publisher

Journal

Year

Volume

4

Issue

3

Pages

310-317

Physical description

Dates

published
1 - 9 - 2006
online
1 - 9 - 2006

Contributors

author
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation

References

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  • [21] Y. Yamamoto: “RHEED-TRAXS study of superstructures induced by Ge and Sn adsorption on a Si(110) surface”, Surface Sci., Vol. 281, (1993), pp. 253–269. http://dx.doi.org/10.1016/0039-6028(93)90639-2[Crossref]
  • [22] Ya.E. Gegusin: Surface diffusion on real crystall surface, In: Surface diffusion and spreading, Ya.E. Gegusin (Ed.), Moscow, Nauka, 1969, pp. 11–77 (in Russian).
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  • [25] G.L. McVay and A.R. DuCharme: “Diffusion of Ge in SiGe alloys”, Phys. Rev. B, Vol. 9, (1974), pp. 627–631. http://dx.doi.org/10.1103/PhysRevB.9.627[Crossref]

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-006-0015-0
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